Original title: Characterization of hydrogenated silicon thin films and diode structures with integrated silicon and germanium nanoparticles
Authors: Stuchlík, Jiří ; Fajgar, R. ; Remeš, Zdeněk ; Kupčík, Jaroslav ; Stuchlíková, Hana
Document type: Papers
Conference/Event: International Conference on Nanomaterials - Research and Application (NANOCON) /9./, Brno (CZ), 20171018
Year: 2018
Language: eng
Abstract: P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge nanoparticles. The Reactive Laser Ablation (RLA) of germanium target was used to cover the intrinsic a-Si:H layer by Ge NPs under a low pressure of the silane. The RLA was performed using focused excimer ArF laser beam under SiH4 background atmosphere. Reaction between ablated Ge NPs and SiH4 led to formation of Ge NPs covered by thin GeSi:H layer. The deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes were alternated repeatedly. Volt-ampere characteristics of final diode structures were measured in dark and under illumination as well as their electroluminescence spectra.
Keywords: a-Si:H; nanoparticles; PIN diode; reactive laser ablation; thin films
Project no.: LTC17029, KONNECT-007
Funding provider: GA MŠk, AV ČR
Host item entry: Nanocon 2017 : conference proceedings : 9th International Conference on Nanomaterials - Research & Application, ISBN 9788087294819

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0307161

Permalink: http://www.nusl.cz/ntk/nusl-410816


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