Original title: Optoelectrical characterization of well oriented n-type zno nanorod arrays on p-type GaN templates
Authors: Yatskiv, Roman ; Grym, Jan ; Schenk, Antonín ; Vaniš, Jan ; Roesel, David ; Chlupová, Šárka
Document type: Papers
Conference/Event: 9th International Conference on Nanomaterials - Research and Application (NANOCON 2017), Brno (CZ), 20171018
Year: 2018
Language: eng
Abstract: A heterojunction formed between a single n-type ZnO nanorod and p-type GaN template was successfully prepared by low cost chemical bath deposition technique. Periodic circular patterns were fabricated by focused ion beam etching through poly(methyl methacrylate) mask to control the size, position, and periodicity of the ZnO nanorods. A possible growth mechanism is introduced to explain the growth process of the nanorods. Optical and electrical properties of the heterojunctions were investigated by low temperature photoluminescence spectroscopy and by the measurement of current-voltage (I-V) characteristics. The I-V characteristics were measured by directly contacting single ZnO nanorods with the conductive atomic force microscopy tip. The diode-like rectifying behavior was observed with a turn-on voltage of 2.3 V and the reverse breakdown voltage was 5 V
Keywords: Conductive atomic force microscopy; Focused ion beam; Photoluminescence spectroscopy
Project no.: GA17-00546S (CEP), GA15-17044S (CEP)
Funding provider: GA ČR, GA ČR

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0294834

Permalink: http://www.nusl.cz/ntk/nusl-393843

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Research > Institutes ASCR > Institute of Photonics and Electronics
Conference materials > Papers
 Record created 2019-03-28, last modified 2022-09-29

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