Original title: Ultra Low Power Tunable Transconductor
Authors: Dabbous, Salma Bay Abo
Document type: Papers
Language: eng
Publisher: Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract: This paper presents ultra-Low power (ultra-LP) Low voltage (LV) tunable transconductor (Gm) and its application to implement Gm-C filter. The CMOS structure of the Gm is performed using bulk-driven (BD) MOST technique, thus it can operate with extremely low voltage supply of ±0.3 V using 0.18 μm CMOS process. Moreover, it consumes ultra-LP about 4.9 μW. The simple topology, proper operating range, and tunability make this transconductor attractive. The transconductor and the Gm-C filter have been examined using simulation program Pspice.
Keywords: Bulk Driven MOST; low power low voltage; transconductor
Host item entry: Proceedings of the 22nd Conference STUDENT EEICT 2016, ISBN 978-80-214-5350-0

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: http://hdl.handle.net/11012/84022

Permalink: http://www.nusl.cz/ntk/nusl-383740


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Universities and colleges > Public universities > Brno University of Technology
Conference materials > Papers