Original title: Impact of the SiNx Thickness on Passivation Quality and Contact Resistivity of Silicon Solar Cell
Authors: Mojrová, Barbora
Document type: Papers
Language: eng
Publisher: Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract: In this work the influence of thickness of Silicon Nitride (SiNX) layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) on passivation quality and contact resistivity (ρC) of n-type Passivated Emitter Rear Totally-diffused (n-PERT) cell was investigated. The solar cell structure comprises front boron emitter and a phosphorous back surface field (BSF) with SiNX layers on both sides for surface passivation. Contacts are made by screen printed and fired through metallization using commercial silver (Ag) paste.
Keywords: contact resistivity; n-PERT; n-type; passivation; silicon solar cell; SiNX
Host item entry: Proceedings of the 22nd Conference STUDENT EEICT 2016, ISBN 978-80-214-5350-0

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: http://hdl.handle.net/11012/84021

Permalink: http://www.nusl.cz/ntk/nusl-383739


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