Original title: Surface to bulk vacancy conversion in GaAs - discussion of the problem
Authors: Nohavica, Dušan ; Krier, A.
Document type: Papers
Conference/Event: European Conference on Surface Science ECOSS /22./, Prague (CZ), 2003-09-07 / 2003-09-12
Year: 2003
Language: eng
Abstract: In the contribution the growth condition influence in MOVPE, MBE and ALE on the surface vacancies conversion to the bulk one was discussed. We adopted Van Vechten's concept supposing comparison of the reconstruction velocity and growth rate as leading parameters of the conversion. We try to consider reaction kinetics in Farrell's et al. surface vacancies fade away mechanisms during MBE growth on the reconstructed surfaces.
Keywords: MOCVD
Project no.: CEZ:AV0Z2067918 (CEP), IAA2067901 (CEP), GR/R43334/01
Funding provider: GA AV ČR, EPSRC
Host item entry: ECOSS 22

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0114356

Permalink: http://www.nusl.cz/ntk/nusl-32559


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Research > Institutes ASCR > Institute of Photonics and Electronics
Conference materials > Papers