Original title:
Influence of rare-earth elements on InP-based semiconductor structures for radiation detectors
Authors:
Grym, Jan ; Procházková, Olga Document type: Papers Conference/Event: Workshop 2002, Prague (CZ), 2002-02-11 / 2002-02-13
Year:
2002
Language:
eng Series:
CTU Reports., volume: Vol. 5, 2002 Sp. Issue Abstract:
Preparation and characterization of InP epitaxial layers with Tb admixture in the growth melt is reported. Structural, electrical and optical properties of InP layers exhibit a signaficant dependence on the presence of Tb and its concentration in the melt. When increasing the concentration of Tb in the growth melt the reversal of electrical conductivity occurs.
Keywords:
III-V semiconductors; liquid phase epitaxial growth; rare earth elements Project no.: CEZ:AV0Z2067918 (CEP), KSK1010104 Projekt 04/01:4043 (CEP), 300106513 Funding provider: GA AV ČR, GA MŠk Host item entry: Proceedings of Workshop 2002
Institution: Institute of Photonics and Electronics AS ČR
(web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences. Original record: http://hdl.handle.net/11104/0114223