Original title: Influence of rare-earth elements on InP-based semiconductor structures for radiation detectors
Authors: Grym, Jan ; Procházková, Olga
Document type: Papers
Conference/Event: Workshop 2002, Prague (CZ), 2002-02-11 / 2002-02-13
Year: 2002
Language: eng
Series: CTU Reports., volume: Vol. 5, 2002 Sp. Issue
Abstract: Preparation and characterization of InP epitaxial layers with Tb admixture in the growth melt is reported. Structural, electrical and optical properties of InP layers exhibit a signaficant dependence on the presence of Tb and its concentration in the melt. When increasing the concentration of Tb in the growth melt the reversal of electrical conductivity occurs.
Keywords: III-V semiconductors; liquid phase epitaxial growth; rare earth elements
Project no.: CEZ:AV0Z2067918 (CEP), KSK1010104 Projekt 04/01:4043 (CEP), 300106513
Funding provider: GA AV ČR, GA MŠk
Host item entry: Proceedings of Workshop 2002

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0114223

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Research > Institutes ASCR > Institute of Photonics and Electronics
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