Original title: Secondary electron contrast of dopped regions in semiconductor - a matter of surface treatment?
Authors: Frank, Luděk ; Müllerová, Ilona ; El-Gomati, M.
Document type: Papers
Conference/Event: Recent trends in charged particle optics and surface physics instrumentation, Skalský dvůr (CZ), 2002-07-08 / 2002-07-12
Year: 2002
Language: eng
Abstract: Direct observation of doped patterns in semiconductor, usually on cleavedsections through multilayers but recently also in plan views of patterneddoping of a technological layer, is acquiring high interest because of its straightforward application in the semiconductor technology. Plenty of experimental data has been collected [1-4] from conventional SEM observation and recently first results showed improved contrasts attainable with specimen immersed into electric field. Main features are the sign of contrast- the p-type regions are always brighter than the n-type ones, and the contrast grows toward lower energies.
Keywords: lower energies; multilayers; semiconductor technology
Project no.: CEZ:AV0Z2065902 (CEP), IAA1065901 (CEP)
Funding provider: GA AV ČR
Host item entry: Proceedings of the 8.sup.th./sup. international seminar, held in Skalský dvůr, ISBN 80-238-8986-9

Institution: Institute of Scientific Instruments AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0101116

Permalink: http://www.nusl.cz/ntk/nusl-29549


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Research > Institutes ASCR > Institute of Scientific Instruments
Conference materials > Papers