Original title: Sekvenční růst GaN nanokrystalů na substrát SiO2 modifikovaný metodou FIB
Translated title: Sequential growth of GaN nanocrystals on SiO2 substrate modified by FIB method
Authors: Flajšmanová, Jana ; Voborný, Stanislav (referee) ; Mach, Jindřich (advisor)
Document type: Bachelor's theses
Year: 2013
Language: cze
Publisher: Vysoké učení technické v Brně. Fakulta strojního inženýrství
Abstract: [cze] [eng]

Keywords: effusion cell; FIB; Ga; GaN; ion-atomic source; postnitridation; pulse deposition; selective growth; XPS.; efúzní cela; FIB; Ga; GaN; iontově-atomární zdroj; postnitridace; sekvenční depozice; selektivní růst; XPS.

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: http://hdl.handle.net/11012/27965

Permalink: http://www.nusl.cz/ntk/nusl-213731


The record appears in these collections:
Universities and colleges > Public universities > Brno University of Technology
Academic theses (ETDs) > Bachelor's theses
 Record created 2016-06-03, last modified 2022-09-04


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