Original title: Metodika nedestruktivního určení koncentračního profilu bóru v Si deskách
Translated title: Methodology of not destructive determination of boron concentration profile in Si wafers
Authors: Holovský, Jakub ; Remeš, Zdeněk
Document type: Methods
Year: 2012
Language: cze
Abstract: [cze] [eng]
Byla navržena, teoreticky analyzována, realizována jak po stránce výpočetní, tak po stránce experimentální a nakonec úspěšně odzkoušena nová metoda určování difúzních profilů rychle, nedestruktivně a bezkontaktně pomocí infračervené reflexe. A new method of determination of diffusion profiles in fast, not destructive and contactless (with help of infra-red reflexion) way was designed, theoretically analysed, realized either in computational and in experimental field and finally successfully tested.
Keywords: boron concentration profile; IR reflection; silicon substrate; UV ellipsometry
Project no.: TA01020972 (CEP)
Funding provider: GA TA ČR

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0251279

Permalink: http://www.nusl.cz/ntk/nusl-200948


The record appears in these collections:
Research > Institutes ASCR > Institute of Physics
Analytical and methodological materials > Methods