Original title:
Erbium doped gallium nitride thin films
Translated title:
Galium-nitridové vrstvy dopované erbiem
Authors:
Prajzler, V. ; Hüttel, I. ; Špirková, J. ; Schröfel, J. ; Machovič, V. ; Peřina, Vratislav Document type: Proceedings Conference/Event: CTU Reports Proceedings of Workshop 2004, Praha (CZ), 2003-02-10 / 2003-02-12
Year:
2004
Language:
eng Abstract:
[eng][cze] The paper describes the preparation and properties of gallium nitride layers with erbiu content.Práce pojednává o přípravě a vlastnostech galiumnitridových vrstev s obsahem erbia.
Keywords:
erbium; GaN; thin films Project no.: CEZ:AV0Z1048901 (CEP), GA104/03/0385 (CEP) Funding provider: GA ČR
Institution: Nuclear Physics Institute AS ČR
(web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences. Original record: http://hdl.handle.net/11104/0012819