Original title: Low frequency noise and I-V characteristic as characterization tools for 2.3 µm CW GaSb based laser diodes
Translated title: Nízkofrekvenční šum a V-A charakteristiky kontinuálních GaSb laserových diod pro 2.3µm
Authors: Vaněk, J. ; Brzokoupil, V. ; Chobola, Z. ; Hulicius, Eduard ; Šimeček, Tomislav
Document type: Papers
Conference/Event: International Workshop on Research Activities of Physics Departments of Civil Engineering Faculties in the Czech and Slovak Republics, Brno (CZ), 2004-09-14 / 2004-09-16
Year: 2004
Language: eng
Abstract: [eng] [cze]
Transport and noise characteristic of forward biased 2.3 µm CW GaSb laser diodes were measured in order to evaluate new technology. From the measurement results it follows that noise spectral density related to defects is of 1/f type and its magnitude was found to be proportional to the square of DC forward current at low injection levels Pro vyhodnocení nové technologie byly změřeny transportní a šumové vlastnosti GaSb laserových diod pro 2.3µm v propustném směru. Z měření vyplývá, že závislost spektrální šumové hustoty způsobené defekty je typu 1/f a její velikost je úměrná čtverci stejnosměrného proudu v propustném směru při nízkých úrovních injekce
Keywords: GaSb; low frequency noise
Project no.: KSK1010104 (CEP)
Funding provider: GA AV ČR
Host item entry: Research Activities of Physics Departments of Civil Engineering Faculties in the Czech and Slovak Republics, ISBN 80-7204-353-6

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0011499

Permalink: http://www.nusl.cz/ntk/nusl-19737


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