Original title: X-ray scattering study of oxide precipitates in Cz-Si
Authors: Caha, O. ; Meduňa, M. ; Bernatová, S. ; Růžička, J. ; Mikulík, P. ; Buršík, Jiří ; Svoboda, Milan ; Bernstorff, S.
Document type: Papers
Conference/Event: Scientific and Business Conference SILICON 2010 /12./, Rožnov pod Radhoštěm (CZ), 2010-11-02 / 2010-11-05
Year: 2010
Language: eng
Abstract: Two x-ray diffraction methods were used for characterization of the oxide precipitates in Czochralski silicon series of samples. The maping of the diffuse scattering around reciprocal lattice point in Bragg geometry and the simultaneous measurement of the diffracted and transmitted beam intensity in the Laue diffraction geometry.
Keywords: defects; silicon; x-ray
Host item entry: SILICON 2010. 12th Scientific and Business Conference, ISBN 978-80-254-7361-0

Institution: Institute of Physics of Materials AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0228231

Permalink: http://www.nusl.cz/ntk/nusl-166323


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Research > Institutes ASCR > Institute of Physics of Materials
Conference materials > Papers