|
|
Fully electrostatic low energy scanning electron column
Romanovský, V. ; El-Gomati, M. ; Frank, Luděk ; Müllerová, Ilona
The exploitation of low-energy electrons for examination of the material surfaces has several advantages. One of them is a small depth penetration of the primary electrons (PE) to the observed material. At low energies the charging effects on non-conductive or slightly conductive specimens are suppressed and also radiation damage of the observed specimen is decreased. Since the secondary electron (SE) yield is high, the signal to noise ratio (SNR) is about one order of magnitude larger than those in microscopes operated at 20kV.
|
|
|
Secondary electron contrast of dopped regions in semiconductor - a matter of surface treatment?
Frank, Luděk ; Müllerová, Ilona ; El-Gomati, M.
Direct observation of doped patterns in semiconductor, usually on cleavedsections through multilayers but recently also in plan views of patterneddoping of a technological layer, is acquiring high interest because of its straightforward application in the semiconductor technology. Plenty of experimental data has been collected [1-4] from conventional SEM observation and recently first results showed improved contrasts attainable with specimen immersed into electric field. Main features are the sign of contrast- the p-type regions are always brighter than the n-type ones, and the contrast grows toward lower energies.
|
|
|
Electrostatic mini SLEEM for surface studies
Romanovský, Vladimír ; El-Gomati, M.
Exploitation of the low-energy electrons is advantageous for several reasons. One of them is their smaller penetration depth into the material, which reveals itself as favourable for the surface analysis. Using the low-energy electrons even causes partial, and in some cases total elimination ofcharging effects at non-conductive or slightly conductive specimens. Slowprimary electrons (PE) cause only reduced radiation damage of specimens.
|
|
| |
|
| |
|
|
Elektrostatický nízkoenergiový rastrovací elektronový mikroskop pro Augerovu analýzu
Romanovský, V. ; El Gomati, M. M. ; Frank, Luděk ; Müllerová, Ilona
A scanning low energy electron microscope (SLEEM) was realized with a cathode lens in which the negatively biased specimen is used as the cathode. In this arrangement, electrons pass through the microscope at high energy and are decelerated to low energy before landing on the sample. This design brings plenty of signal even in the landing energy range of tens or units of eV. However, the use of the primary electrons with low energy brings some problems e.g. low source brightness, increased aberrations and sensitivity to stray fields. The scanning Auger microscopy (SAM) is well-established experimental method. A combination of SAM and SLEEM in one device would therefore provide a sufficient tool to solve the problems inherent in these individual methods. Although much has already been achieved in the area of detection of slow electrons, none of the methods currently known is suitable to be built into a scanning illumination column for Auger microprobe analysis
|
guest ::
