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Characterization of hydrogenated silicon thin films and diode structures with integrated silicon and germanium nanoparticles
Stuchlík, Jiří ; Fajgar, R. ; Remeš, Zdeněk ; Kupčík, Jaroslav ; Stuchlíková, Hana
P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge nanoparticles. The Reactive Laser Ablation (RLA) of germanium target was used to cover the intrinsic a-Si:H layer by Ge NPs under a low pressure of the silane. The RLA was performed using focused excimer ArF laser beam under SiH4 background atmosphere. Reaction between ablated Ge NPs and SiH4 led to formation of Ge NPs covered by thin GeSi:H layer. The deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes were alternated repeatedly. Volt-ampere characteristics of final diode structures were measured in dark and under illumination as well as their electroluminescence spectra.
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Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
Stuchlík, Jiří ; Fajgar, Radek ; Kupčík, Jaroslav ; Remeš, Zdeněk ; Stuchlíková, The-Ha
Substrates with ZnO (or ITO) conductive layers were covered by thin film of a-Si:H deposited by PECVD technique. Under a turbo-molecular vacuum (10-4 Pa) the reactive laser ablation (RLA) was used to cover this a-Si:H thin film by germanium NPs. The RLA was performed using focused excimer ArF laser beam (193 nm, 100 mJ/pulse) under SiH4 background atmosphere (0.5 Pa). As a target the elemental germanium was used. Reaction between ablated Ge and silane led to formation of Ge NPs covered by thin SiGe layer. Then the deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes was alternated and applied a few times. The Si:H thin films with integrated Ge NPs were characterized by microscopic, spectroscopic and diffraction techniques. I-V characteristics of final diode structures without and under illumination were measured as well as their electroluminescence behaviour.
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The deposition of germanium nanoparticles on hydrogenated amorphous silicon
Stuchlík, Jiří ; Volodin, V.A. ; Shklyaev, A.A. ; Stuchlíková, The-Ha ; Ledinský, Martin ; Čermák, Jan ; Kupčík, Jaroslav ; Fajgar, Radek ; Mortet, Vincent ; More Chevalier, Joris ; Ashcheulov, Petr ; Purkrt, Adam ; Remeš, Zdeněk
We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 °C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.
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Preparation of zinc oxide nanorods colloid from thin layers
Mičová, Júlia ; Remeš, Zdeněk ; Chang, Yu-Ying ; Neykova, Neda
The interest in ZnO (zinc oxide) nanoparticles is increasing due to low cost of their processing as well as the ability of fabricating ZnO nanostructures with controllable morphology such as size, shape and orientation. Our choice of method of the preparation of the nanostructured thin ZnO layers is the hydrothermal growth of ZnO nanorods on glass substrates coated by the nucleation layer deposited by the reactive magnetron sputtering. We have developed and optimized conditions of the thin layer growth with controllable dimensions of nanorods followed by the ultrasound peeling. The colloid of ZnO nanorods was characterized by measuring the size of particles using the dynamic light scattering (DLS) and the scanning electron microscopy (SEM). We found that the dynamic light scattering (DLS) can’t be directly used for size evaluation of ZnO nanorods due to their non- sperical shape. \n
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Hydrogen plasma treatment of ZnO thin films
Chang, Yu-Ying ; Neykova, Neda ; Stuchlík, Jiří ; Purkrt, Adam ; Remeš, Zdeněk
ZnO is an attractive wide band gap semiconductor with large exciton binding energy, high refractive index, high biocompatibility and diversety of nanostructure shapes which makes it suitable for many applications in the optoelectronic devices, optical sensors, and biosensors. We study the effect of hydrogen plasma treatment of the nominally undoped ZnO thin film deposited by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen plasma. The SEM images show that the crystal size increases with film thickness. We confirm, that the electrical conductivity significantly increases after hydrogen plasma treatment by 4 orders of magnitude. Moreover, the increase of the infrared optical absorption, related to free carrier concentration, was detected below the optical absorption edge by the photothermal deflection spectroscopy.\n
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Transfer of electrons or holes between localized states. Application to polymer electric conductivity
Král, Karel ; Menšík, Miroslav
Basing on the quantum transport formalizm a formula for the irreversible transfer of charged particles has been introduced by us recently. This formula is expected to be suitable for the theoretical description of the electron or hole transfer between quantum dots, other nanoparticles, molecules, and so on. We discuss shortly the main physical properties of the formula. We also demonstrate the use of the formula for the theoretical analysis of the electronic physical properties of some electrically conductive polymers.\n
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