Název:
STUDY OF ELECTROPHORETIC DEPOSITION OF Pd METAL NANOPARTICLES ON InP AND GaN CRYSTAL SEMICONDUCTORS FOR H2 GAS SENSORS
Autoři:
Žďánský, Karel ; Yatskiv, Roman ; Grym, Jan ; Černohorský, O. ; Zavadil, Jiří ; Kostka, František Typ dokumentu: Příspěvky z konference Konference/Akce: NANOCON 2010. International Conference /2./, Olomouc (CZ), 2010-10-12 / 2010-10-14
Rok:
2010
Jazyk:
eng
Abstrakt: Deposition of Pd nanoparticles (NPs) on InP or GaN single crystal wafer was performed from isooctane colloid solution. Diodes were prepared by making Schottky contact with colloidal graphite on Pd NPs partly coated surface and ohmic contact on the blank side of the wafer. It was found that several ppb of hydrogen in nitrogen gas can be detected by monitoring the change of diode current at a constant bias voltage. Diodes made on GaN were about ten times more sensitive to hydrogen than those made on InP.
Klíčová slova:
nanostructures; semiconductor devices; sensors Číslo projektu: CEZ:AV0Z20670512 (CEP) Zdrojový dokument: CONFERENCE PROCEEDINGS NANOCON 2010, ISBN 978-80-87294-19-2
Instituce: Ústav fotoniky a elektroniky AV ČR
(web)
Informace o dostupnosti dokumentu:
Dokument je dostupný v příslušném ústavu Akademie věd ČR. Původní záznam: http://hdl.handle.net/11104/0194678