Original title: Growth of InP crystals for radiation detectors and other application
Authors: Pekárek, Ladislav ; Yatskiv, Roman
Document type: Papers
Conference/Event: Development of Materials Science in Research and Education, Joint Seminar 2008 /18./, Hnanice (CZ), 2008-09-02 / 2008-09-05
Year: 2008
Language: eng
Abstract: Bulk InP single crystals were grown by Czochralski method. Various dopants were added to the melt to obtain single crystals suitable for radiation detectors and other application. The intentionally doped of InP crystals were characterized by measurements of resistivity and Hall coefficient. Prototype detectors were prepared and evaluated by spectral detection of alpha particles and x-rays.
Keywords: crystal growth; InP; radiation detector
Project no.: CEZ:AV0Z20670512 (CEP), KAN400670651 (CEP), GA102/06/0153 (CEP)
Funding provider: GA AV ČR, GA ČR
Host item entry: Proceedings of the 18th Joint seminar Development of materials science in research and education, ISBN 978-80-254-0864-3

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0187217

Permalink: http://www.nusl.cz/ntk/nusl-41607


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Research > Institutes ASCR > Institute of Photonics and Electronics
Conference materials > Papers