Název: Optoelectrical characterization of well oriented n-type zno nanorod arrays on p-type GaN templates
Autoři: Yatskiv, Roman ; Grym, Jan ; Schenk, Antonín ; Vaniš, Jan ; Roesel, David ; Chlupová, Šárka
Typ dokumentu: Příspěvky z konference
Konference/Akce: 9th International Conference on Nanomaterials - Research and Application (NANOCON 2017), Brno (CZ), 20171018
Rok: 2018
Jazyk: eng
Abstrakt: A heterojunction formed between a single n-type ZnO nanorod and p-type GaN template was successfully prepared by low cost chemical bath deposition technique. Periodic circular patterns were fabricated by focused ion beam etching through poly(methyl methacrylate) mask to control the size, position, and periodicity of the ZnO nanorods. A possible growth mechanism is introduced to explain the growth process of the nanorods. Optical and electrical properties of the heterojunctions were investigated by low temperature photoluminescence spectroscopy and by the measurement of current-voltage (I-V) characteristics. The I-V characteristics were measured by directly contacting single ZnO nanorods with the conductive atomic force microscopy tip. The diode-like rectifying behavior was observed with a turn-on voltage of 2.3 V and the reverse breakdown voltage was 5 V
Klíčová slova: Conductive atomic force microscopy; Focused ion beam; Photoluminescence spectroscopy
Číslo projektu: GA17-00546S (CEP), GA15-17044S (CEP)
Poskytovatel projektu: GA ČR, GA ČR
Zdrojový dokument: 9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2017), ISBN 978-80-87294-81-9

Instituce: Ústav fotoniky a elektroniky AV ČR (web)
Informace o dostupnosti dokumentu: Dokument je dostupný v příslušném ústavu Akademie věd ČR.
Původní záznam: http://hdl.handle.net/11104/0294834

Trvalý odkaz NUŠL: http://www.nusl.cz/ntk/nusl-393843


Záznam je zařazen do těchto sbírek:
Věda a výzkum > AV ČR > Ústav fotoniky a elektroniky
Konferenční materiály > Příspěvky z konference