Original title: Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure
Authors: Hájek, František ; Hospodková, Alice ; Oswald, Jiří ; Slavická Zíková, Markéta
Document type: Papers
Conference/Event: Student scientific conference of solid state engineering and materials /8./, Sedliště (CZ), 20180917
Year: 2018
Language: eng
Abstract: Luminescence of InGaN/GaN multiple quantum well (MQW) structure is strongly affected by spontaneous and piezoelectric polarizations. To suppress them, doping with shallow impurities (e. g. Si) can be used. This works presents the effects of Si doping in different layers around the MQW area. On the basis of photoluminescence and cathodoluminescence measurements and band structure simulation, the piezoelectric field is most efficiently reduced when both layers under and over MQW area are Si doped.\n
Keywords: luminescence; nitrides; quantum wells; semiconductor doping
Host item entry: Proceedings of the 8th Student scientific conference of solid state engineering and materials, ISBN 978-80-01-06511-2

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at external website.
External URL: html: https://kiplwww.fjfi.cvut.cz/drupal7/sites/default/files/Sbornik_SSCSSPM8_2018_FinalPublished_compressed.pdf
Original record: http://hdl.handle.net/11104/0294317

Permalink: http://www.nusl.cz/ntk/nusl-393218


The record appears in these collections:
Research > Institutes ASCR > Institute of Physics
Conference materials > Papers
 Record created 2019-03-14, last modified 2020-03-26


No fulltext
  • Export as DC, NUŠL, RIS
  • Share