Original title: The deposition of germanium nanoparticles on hydrogenated amorphous silicon.
Authors: Stuchlík, J. ; Volodin, V.A. ; Shklyaev, A.A. ; Stuchlikova, T.H. ; Ledinsky, M. ; Čermák, J. ; Kupčík, Jaroslav ; Fajgar, R. ; Mortet, V. ; More-Chevalier, J. ; Ashcheulov, P. ; Purkrt, A. ; Remeš, Z.
Document type: Papers
Conference/Event: NANOCON 2016. International Conference on Nanomaterials - Research and Application /8./, Brno (CZ), 20161019
Year: 2017
Language: eng
Abstract: We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 degrees C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.
Keywords: a-Si:H; Ge nanoparticles; MBE; PECVD
Host item entry: NANOCON 2016 8th International Conference on Nanomaterials - Research & Application. Conference proceedings, ISBN 978-80-87294-71-0

Institution: Institute of Inorganic Chemistry AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0279492

Permalink: http://www.nusl.cz/ntk/nusl-371108

The record appears in these collections:
Research > Institutes ASCR > Institute of Inorganic Chemistry
Conference materials > Papers
 Record created 2018-01-11, last modified 2020-03-27

No fulltext
  • Export as DC, NUŠL, RIS
  • Share