National Repository of Grey Literature 3 records found  Search took 0.00 seconds. 
Plasma hydrogenation of hydrothermally grown ZnO micropods
Remeš, Zdeněk ; Aubrechtová Dragounová, Kateřina ; Mičová, J.
The hydrothermally grown ZnO micropods have been placed on grounded stainless-steel holder and exposed to an inductively coupled plasma (ICP) monitored in-situ by optical emission spectroscopy (OES). OES shows the immediate release of oxygen during Ar ion bombardment. The prolonged exposure to hydrogen plasma leads to deterioration of the optical properties as well. The exposure, rf power and hydrogen pressure have been optimized to enhance UV-photoluminescence peak at the wavelength 384 nm related to surface bounded excitons and reduce the defect-related photoluminescence in red spectral range. The strong UV photoluminescence appears just after 1 minute of plasma hydrogenation in a radio frequency plasma discharge with power density 40 W/dm3 and hydrogen pressure 17 Pa.
Optoelectrical characterization of well oriented n-type zno nanorod arrays on p-type GaN templates
Yatskiv, Roman ; Grym, Jan ; Schenk, Antonín ; Vaniš, Jan ; Roesel, David ; Chlupová, Šárka
A heterojunction formed between a single n-type ZnO nanorod and p-type GaN template was successfully prepared by low cost chemical bath deposition technique. Periodic circular patterns were fabricated by focused ion beam etching through poly(methyl methacrylate) mask to control the size, position, and periodicity of the ZnO nanorods. A possible growth mechanism is introduced to explain the growth process of the nanorods. Optical and electrical properties of the heterojunctions were investigated by low temperature photoluminescence spectroscopy and by the measurement of current-voltage (I-V) characteristics. The I-V characteristics were measured by directly contacting single ZnO nanorods with the conductive atomic force microscopy tip. The diode-like rectifying behavior was observed with a turn-on voltage of 2.3 V and the reverse breakdown voltage was 5 V
Preparation and characterization of silicon-based materials
Šlechta, Miroslav ; Dian, Juraj (advisor) ; Jelínek, Ivan (referee)
Title: Preparation and characterization of silicon-based materials Author: Miroslav Šlechta Department: Department of Chemical Physics and Optics Supervisor: doc. RNDr. Juraj Dian, Csc., Department of Chemical Physics and Optics Abstract: Porous silicon is nanostructured material based on silicon. He was prepared by anodic etching of crystalline silicon in hydrofluoric acid. Physical and chemical properties of porous silicon nanocrystals resulting from the dimensions, which range from units to tens of nanometers. For nanostructured silicon compared to crystalline silicon, exhibit unique properties that depend on the degree of quantum dimensional phenomena and phenomena on its large internal surface. Suitable choice of the silicon substrate, particularly in terms of conductivity and crystallographic orientation, and technological conditions (in particular electrolyte composition, the etching time and current density) can be prepared nanostructured materials of different pore sizes - macroporous, mesoporous and microporous silicon and varying representation Si-O and Si-H bonds. Morphology and chemical composition of the surface of porous silicon allows to think of it as a suitable material for a range of applications - particularly chemical sensors and biosensors, optoelectronics and biomedical applications....

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