National Repository of Grey Literature 3 records found  Search took 0.00 seconds. 
Tunable laser diode at 633nm for accurate length measuring and spectroscopy
Pham, Minh Tuan ; Mikel, Břetislav ; Hrabina, Jan ; Lazar, Josef ; Číp, Ondřej
Tunable DBR diode lasers at 633 nm could be a good candidates for replacement of well known He-Ne lasers at same wavelength. This paper deals with development of those DBR light source at 633 nm, their utilization in accurate length measuring and laser spectroscopy. We mainly focus on their properties and behavior during measuring such as temperature or current tuning and short time stability.
Semiconductor lasers with high coherence and their application, activities of the Coherence Optics Department in ISI, ASCR
Lazar, Josef
Pracoviště oddělení Koherenční optiky svými aktivitami navazuje na tradici výzkumu a vývoje v oblasti laserů s vysokou koherencí a jejich aplikaci především pro metrologické účely. Tým Ing. Františka Petrů, DrSc. vyvinul první plynový laser v tehdejší ČSSR a následně dovedl technologii He-Ne laserů k vysoké dokonalosti. Ve svém úsilí se soustředil na frekvenčně stabilizované lasery pro laserovou interferometrii a následně v souvislosti s definicí jednotky délky prostřednictvím rychlosti šíření světla ve vakuu též na konstrukci laseru - primárního etalonu délky, resp. optické frekvence.295 The workplace of the Coherence Optics Department continues in the tradition of the research and development in the area of lasers with high coherence and their application especially for metrological purposes. The team of Ing. František Petrů, DrSc, developed first gaseous laser in the former CSSR and then led the technology of He-Ne lasers to highest perfection. It focused its striving to the frequency-stabilised lasers for laser interferometry and then, in correspondence with the definition of the unit of length by means of light propagation in vacuum, also to the construction of a laser - primary length, i.e. optical frequency etalon.
Characterization of lasers with ë-InAs layers in GaAs
Hazdra, P. ; Voves, J. ; Oswald, Jiří ; Hulicius, Eduard ; Pangrác, Jiří ; Melichar, Karel ; Šimeček, Tomislav ; Petříček, Otto ; Kuldová, Karla
The dependence of the electroluminescence spectra on the number of ë-InAs layers and on the distance of these ë-InAs layers was studied under pulse excitation in the wide range of current densities.

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