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National Repository of Grey Literature 2 records found  Search took 0.01 seconds. 
EPITAXIAL OVERGROWTH OF InP and GaAs MICROPORES, MICROCAVITIES AND MICROLAMELLAS BY InAs AND InGaAs
 Nohavica, Dušan ; Grym, Jan ; Hulicius, Eduard ; Pangrác, Jiří ; Gladkov, Petar ; Jarchovský, Zdeněk
Structural and optical properties of micro and nano-porous InP and GaAs substrates used for an epitaxial overgrowth of thin films were investigated. Both crystalographically oriented (CO) and current line oriented (CLO) pore networks were created by electrochemical dissolution. Heat treatment of InP pores at 650oC and GaAs pores at 750-850oC converted them into microcavities The capability of improved structural quality homo- and hetero-epitaxially overgrown films on the porous InP, was also demonstrated by LPE growth of InP and InAs and GaInAs on GaAs by MOVPE technology.
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[Mechanismus vzniku spontánně tvořených nanostruktůr při heteroepitaxy
 Kotrla, Miroslav ; Volkmann, T. ; Much, F. ; Biehl, M.
We briefly review the recent results on formation of self-assembled nanostructures during heteroepitaxy of immiscible metals. The methods of microscopic modelling of multicomponent growth are described. Results of simulation of self-assembled structures with alternating strips using both lattice and off-lattice atomistic models are presented.
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