|
| |
|
|
Depositon Ga and GaN nanostructures on graphen substrate
Hammerová, Veronika ; Váňa, Rostislav (referee) ; Mach, Jindřich (advisor)
This diploma thesis is focused on deposition Ga and GaN structures on graphene fabricated by method of mechanical exfoliation. For mechanical exfoliation was used new method with using DGL Gel-Film with kinetically controlled adhesion. Ga is deposited by Molecular beam epitaxy with using eusion cell in UHV conditions. GaN was obtained by post-nitridation of Ga islands. These structures were investigated with optical microscope, SEM, Raman spectroscopy and photoluminiscence.
|
|
|
Application onf the Focused Ion on Electron Beam in Nanotechnologies
Šamořil, Tomáš ; Mikulík, Petr (referee) ; Jiruše, Jaroslav (referee) ; Šikola, Tomáš (advisor)
Nowadays, the systems that allow simultaneous employment of both focused electron and ion beams are very important tools in the field of micro- and nanotechnology. In addition to imaging and analysis, they can be used for lithography, which is applied for preparation of structures with required shapes and dimensions at the micrometer and nanometer scale. The first part of the thesis deals with one lithographic method – focused electron or ion beam induced deposition, for which a suitable adjustment of exposition parameters is searched and quality of deposited metal structures in terms of shape and elemental composition studied. Subsequently, attention is paid also to other types of lithographic methods (electron or ion beam lithography), which are applied in preparation of etching masks for the subsequent selective wet etching of silicon single crystals. In addition to optimization of mentioned techniques, the application of etched silicon surfaces for, e.g., selective growth of metal structures has been studied. The last part of the thesis is focused on functional properties of selected 2D or 3D structures.
|
|
| |
|
|
Evolutionary history of tetraploid representatives Galium pusillum group (sect. Leptogalium) in central Europe. Allopatric differentiation of Czech endemic species G. sudeticum
Knotek, Adam ; Kolář, Filip (advisor) ; Chrtek, Jindřich (referee)
The presented study tries to reveal the evolutionary history of polyploid complex Galium pusillum aiming on a rare czech endemic species G. sudeticum, an ideal model to study allopatric speciation in the context of Central European (post)glacial development. The species G. sudeticum grows in Krkonose Mts. and on serpentines in western Bohemia (Slavkovský les) more than 200 kilometers away. Our morphological and molecular data suggest a clearly different history of its two isolated areas. The populations in Krkonose Mts. are probable relics of mountainous species G. anisophyllon which was there on its northern border of occurence and hybridized with lowland species G. valdepilosum during postglacial vegetations shifts. This fact is well supported by intermediate position of Krkonose Mts. populations in both morphological and molecular AFLP analyses and by sharing the same chloroplast haplotype with geographically close lowland populations. On the other hand the serpentine lowland populations in western Bohemia are both morphologicaly and genetically indistinguishable from G. valdepilosum. Distinct genetic lineage of few populations belonging to G. valdepilosum (incl. one traditionaly referred as G. sudeticum) was found in western Bohemia and Bavaria, located on relic stands (calcareous and serpentine...
|
|
| |
|
|
Evolutionary history of tetraploid representatives Galium pusillum group (sect. Leptogalium) in central Europe. Allopatric differentiation of Czech endemic species G. sudeticum
Knotek, Adam ; Kolář, Filip (advisor) ; Chrtek, Jindřich (referee)
The presented study tries to reveal the evolutionary history of polyploid complex Galium pusillum aiming on a rare czech endemic species G. sudeticum, an ideal model to study allopatric speciation in the context of Central European (post)glacial development. The species G. sudeticum grows in Krkonose Mts. and on serpentines in western Bohemia (Slavkovský les) more than 200 kilometers away. Our morphological and molecular data suggest a clearly different history of its two isolated areas. The populations in Krkonose Mts. are probable relics of mountainous species G. anisophyllon which was there on its northern border of occurence and hybridized with lowland species G. valdepilosum during postglacial vegetations shifts. This fact is well supported by intermediate position of Krkonose Mts. populations in both morphological and molecular AFLP analyses and by sharing the same chloroplast haplotype with geographically close lowland populations. On the other hand the serpentine lowland populations in western Bohemia are both morphologicaly and genetically indistinguishable from G. valdepilosum. Distinct genetic lineage of few populations belonging to G. valdepilosum (incl. one traditionaly referred as G. sudeticum) was found in western Bohemia and Bavaria, located on relic stands (calcareous and serpentine...
|
|
|
Depositon Ga and GaN nanostructures on graphen substrate
Hammerová, Veronika ; Váňa, Rostislav (referee) ; Mach, Jindřich (advisor)
This diploma thesis is focused on deposition Ga and GaN structures on graphene fabricated by method of mechanical exfoliation. For mechanical exfoliation was used new method with using DGL Gel-Film with kinetically controlled adhesion. Ga is deposited by Molecular beam epitaxy with using eusion cell in UHV conditions. GaN was obtained by post-nitridation of Ga islands. These structures were investigated with optical microscope, SEM, Raman spectroscopy and photoluminiscence.
|
|
| |
|
|
Application onf the Focused Ion on Electron Beam in Nanotechnologies
Šamořil, Tomáš ; Mikulík, Petr (referee) ; Jiruše, Jaroslav (referee) ; Šikola, Tomáš (advisor)
Nowadays, the systems that allow simultaneous employment of both focused electron and ion beams are very important tools in the field of micro- and nanotechnology. In addition to imaging and analysis, they can be used for lithography, which is applied for preparation of structures with required shapes and dimensions at the micrometer and nanometer scale. The first part of the thesis deals with one lithographic method – focused electron or ion beam induced deposition, for which a suitable adjustment of exposition parameters is searched and quality of deposited metal structures in terms of shape and elemental composition studied. Subsequently, attention is paid also to other types of lithographic methods (electron or ion beam lithography), which are applied in preparation of etching masks for the subsequent selective wet etching of silicon single crystals. In addition to optimization of mentioned techniques, the application of etched silicon surfaces for, e.g., selective growth of metal structures has been studied. The last part of the thesis is focused on functional properties of selected 2D or 3D structures.
|
guest ::
