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Epitaxial films of ceria for opto- electronics
Kubát, Jan ; Mysliveček, Josef (advisor) ; Antoš, Roman (referee)
This diploma thesis studies magneto-optical (MO) response of epitaxial thin films of Co-doped ceria. Thin films were characterized by XPS, LEED, STM, spectroscopic ellipsometry and measurement of MO activity. The work focuses on studying MO response of the films depending on film thickness, cobalt concentration, oxidation state of cerium and chemical state of cobalt. Spectra of MO response consist of low energy region where the MO activity is mediated by transitions from defect induced states to conduction band and high energy region where a peak of MO activity appears which we attribute to transitions from valence band to conduction band. In this work we qualitatively explain the effects of the physico- chemical states of the thin films on the structure of the obtained MO spectra, mainly on the appearance of the MO activity in the low energy region, and on the changes of the position of the MO peak. Compared to other preparation methods the epitaxial thin films allow achieving a shift of the MO peak in the direction of higher photon energy.
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Epitaxial films of ceria for opto- electronics
Kubát, Jan ; Mysliveček, Josef (advisor) ; Antoš, Roman (referee)
This diploma thesis studies magneto-optical (MO) response of epitaxial thin films of Co-doped ceria. Thin films were characterized by XPS, LEED, STM, spectroscopic ellipsometry and measurement of MO activity. The work focuses on studying MO response of the films depending on film thickness, cobalt concentration, oxidation state of cerium and chemical state of cobalt. Spectra of MO response consist of low energy region where the MO activity is mediated by transitions from defect induced states to conduction band and high energy region where a peak of MO activity appears which we attribute to transitions from valence band to conduction band. In this work we qualitatively explain the effects of the physico- chemical states of the thin films on the structure of the obtained MO spectra, mainly on the appearance of the MO activity in the low energy region, and on the changes of the position of the MO peak. Compared to other preparation methods the epitaxial thin films allow achieving a shift of the MO peak in the direction of higher photon energy.
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Experimental control of Ce3+ concentration in ceria based model catalysts
Stetsovych, Vitalii ; Mysliveček, Josef (advisor) ; Lykhach, Yaroslava (referee) ; Rezek, Bohuslav (referee)
Concentration of Ce3+ is one of the most important parameters that influence the reactivity of ceria based catalyst. In this work we examine different experimental approaches for controlling Ce3+ concentration in cerium oxide model catalyst systems such as: i) influencing the stoichiometry of ceria, ii) introducing high valence doping agent, and iii) growing ultra thin ceria films with a strong metal substrate interaction. Structure, morphology and chemical state of prepared reduced ceria based systems were examined by means of surface science techniques: scanning tunneling microscopy, low-energy electron diffraction and X-ray photoelectron spectroscopy. In the present work an original method of ceria film reduction was introduced that allows stepwise control on stoichiometry and degree of film reduction (i). Further we introduce preparation procedures for well-ordered tungsten doped ceria model system (ii) and for the high quality 2D ultrathin ceria system on Cu (1 1 1) (iii). Preparation methods and model systems introduced in this work incorporate different physicochemical principles of Ce3+ induction and provide a variety of model systems useful for examining different effects that diversely prepared Ce3+ ions have on the activity of the catalyst.
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