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Preparation of InAs nanowires by MBE
Stanislav, Silvestr ; Maniš, Jaroslav (referee) ; Musálek, Tomáš (advisor)
The bachelor’s thesis deals with growth of InAs nanowires grown on silicon substrate by molecular beam epitaxy. The emphasis is mainly layed on fabrication of nanowires grown via Vapour-Liquid-Solid mechanism using gold catalytic nanoparticles. There is a brief description of two most common mechanisms of nanowire growth in the first part of the thesis. The text also discusses crystal structure of InAs and doping options of InAs nanowires. The experimental part is aimed at deposition and the impact of different growth conditions on both growth mechanism and nanowire morphology.
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Design of the carbon atomic source for deposition of graphene in UHV
Čalkovský, Vojtěch ; Bábor, Petr (referee) ; Mach, Jindřich (advisor)
This bachelor's thesis deals with the design of the atomic carbon source for deposition of graphene layers in UHV conditions. In the first part are briefly described the problems of epitaxial growth, the theory of atomic beams and theory of sublimation. The second part is aimed on graphene description, namely on his properties and on the growth of graphene layers, especially by molecular beam epitaxy. The third part contains brief description of detection and analysis methods of carbon atomic beams. In the practical part of this bachelor's thesis the design and the numeric calculations were made in Simion 8.0 and EOD program. Afterwards the atomic carbon source was constructed. In the conclusion are discussed the obtained results.
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Depositon Ga and GaN nanostructures on graphen substrate
Hammerová, Veronika ; Váňa, Rostislav (referee) ; Mach, Jindřich (advisor)
This diploma thesis is focused on deposition Ga and GaN structures on graphene fabricated by method of mechanical exfoliation. For mechanical exfoliation was used new method with using DGL Gel-Film with kinetically controlled adhesion. Ga is deposited by Molecular beam epitaxy with using eusion cell in UHV conditions. GaN was obtained by post-nitridation of Ga islands. These structures were investigated with optical microscope, SEM, Raman spectroscopy and photoluminiscence.
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Preparation of low-dimensional III-V semiconductors
Stanislav, Silvestr ; Detz, Hermann (referee) ; Kolíbal, Miroslav (advisor)
Tato diplomová práce se zabývá přípravou nanostruktur z indium arsenidu (InAs) pomocí metody molekulární svazkové epitaxe (MBE). Důraz je kladen na výrobu struktur ve formě nanodrátů na křemíkovém substrátu. V úvodní části práce je popsána motivace pro studium III-V polovodičů a konkrétně InAs. Následující kapitoly vysvětlují dva základní princpy tvorby nanodrátů. Experimentální část práce diskutuje možnost přípravy indiového katalyzátoru pro samokatalyzovaný růst InAs nanodrátů v konkrétní aparatuře MBE. Následuje prezentace výsledků růstu InAs nanodrátů mechanismem selektivní epitaxe (SAE). Nanodráty byly vyrobeny na substrátu s termálně dekomponovaným oxidem a rovněž na substrátech s litograficky připravenou oxidovou maskou.
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Optimization of Carbon atomic source for graphene layer growth by MBE method
Liška, Petr ; Bartošík, Miroslav (referee) ; Mach, Jindřich (advisor)
This bachelor’s thesis deals with the development and optimization of an atomic source of carbon atoms with the thermal energy (0.1÷1 eV). An atomic beam in the conditions of ultrahigh vacuum is considered to be a suitable source of superior graphene layers also due to the high purity of the method. The first part of this work describes graphene as a material and the method of molecular beam epitaxy. The second part is dedicated to the description of an assembly of the carbon source and its optimization which also concludes with experimental data obtained from measurement of the deposited carbon layers on various substrates (Cu, Ge, Al2O3, SiO2).
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Preparation of low-dimensional III-V semiconductors
Stanislav, Silvestr ; Detz, Hermann (referee) ; Kolíbal, Miroslav (advisor)
Tato diplomová práce se zabývá přípravou nanostruktur z indium arsenidu (InAs) pomocí metody molekulární svazkové epitaxe (MBE). Důraz je kladen na výrobu struktur ve formě nanodrátů na křemíkovém substrátu. V úvodní části práce je popsána motivace pro studium III-V polovodičů a konkrétně InAs. Následující kapitoly vysvětlují dva základní princpy tvorby nanodrátů. Experimentální část práce diskutuje možnost přípravy indiového katalyzátoru pro samokatalyzovaný růst InAs nanodrátů v konkrétní aparatuře MBE. Následuje prezentace výsledků růstu InAs nanodrátů mechanismem selektivní epitaxe (SAE). Nanodráty byly vyrobeny na substrátu s termálně dekomponovaným oxidem a rovněž na substrátech s litograficky připravenou oxidovou maskou.
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Optimization of Carbon atomic source for graphene layer growth by MBE method
Liška, Petr ; Bartošík, Miroslav (referee) ; Mach, Jindřich (advisor)
This bachelor’s thesis deals with the development and optimization of an atomic source of carbon atoms with the thermal energy (0.1÷1 eV). An atomic beam in the conditions of ultrahigh vacuum is considered to be a suitable source of superior graphene layers also due to the high purity of the method. The first part of this work describes graphene as a material and the method of molecular beam epitaxy. The second part is dedicated to the description of an assembly of the carbon source and its optimization which also concludes with experimental data obtained from measurement of the deposited carbon layers on various substrates (Cu, Ge, Al2O3, SiO2).
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Preparation of InAs nanowires by MBE
Stanislav, Silvestr ; Maniš, Jaroslav (referee) ; Musálek, Tomáš (advisor)
The bachelor’s thesis deals with growth of InAs nanowires grown on silicon substrate by molecular beam epitaxy. The emphasis is mainly layed on fabrication of nanowires grown via Vapour-Liquid-Solid mechanism using gold catalytic nanoparticles. There is a brief description of two most common mechanisms of nanowire growth in the first part of the thesis. The text also discusses crystal structure of InAs and doping options of InAs nanowires. The experimental part is aimed at deposition and the impact of different growth conditions on both growth mechanism and nanowire morphology.
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Depositon Ga and GaN nanostructures on graphen substrate
Hammerová, Veronika ; Váňa, Rostislav (referee) ; Mach, Jindřich (advisor)
This diploma thesis is focused on deposition Ga and GaN structures on graphene fabricated by method of mechanical exfoliation. For mechanical exfoliation was used new method with using DGL Gel-Film with kinetically controlled adhesion. Ga is deposited by Molecular beam epitaxy with using eusion cell in UHV conditions. GaN was obtained by post-nitridation of Ga islands. These structures were investigated with optical microscope, SEM, Raman spectroscopy and photoluminiscence.
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