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Laser spectroscopy of semiconductor quantum dots
Pokorný, Martin ; Trojánek, František (advisor) ; Kuldová, Karla (referee)
This work is focused on examining photoluminescent properties of InAs quantum dots (QDs) on GaAs substrate covered by GaAs1-xSbx strain reducing capping layer (SRL) prepared by Stranski-Krastanow method. We measured luminescence decay time of two samples with different concentration of Sb in this layer. We investigated the influence of temperature, intensity and wavelength of the excitation pulse on the luminescent decay time. We also compared the properties of the samples after excitation by 760 nm pulse and 850 nm pulse - the former one is energetically above the substrate band gap; in the second case we excited only the QDs and the wetting layer (WL). We consequently derived recombination and relaxation processes occurring inside InAs QDs and also the transport of charge carriers from the substrate and the WL into QDs. One part of this diploma thesis was to learn about the methods of measuring ultrafast photoluminescence and build the experimental set-up.
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Study of semiconductors by methods of laser spectroscopy
Dzurňák, Branislav ; Trojánek, František (advisor) ; Oswald, Jiří (referee) ; Herynková, Kateřina (referee)
Title: Study of semiconductors by methods of time resolved laser spectroscopy: Luminescence spectroscopy of nanocrystalline diamond Author: Branislav Dzurňák Department: Department of Chemical Physics and Optics Supervisor: doc. RNDr. František Trojánek, Ph.D. Abstract: The PhD thesis is focused on optical properties of nanocrystalline diamond prepared by chemical vapour deposition method. Photoluminescence of nanocrystalline diamond samples and effects of ambient temperature, pressure, pH and UV irradiation on it are studied by laser spectroscopy. Results suggest the keyrole of water and air adsorbates which affect the energy states in the sub-bandgap region of diamond. Photoluminescence decay of samples of different surface termination and structure and its dependency on ambient pressure and temperature is studied by methods of ultrafast (picosecond and nanosecond scale) laser spectroscopy. Results are analysed by power-law decay function which fits well the luminescence decay curves and also describes the dynamics of charge carriers in states localised within the bandgap. The model of interaction of nanocrystalline diamond with air adsorbates is proposed. Non-linear optical properties of nanocrystalline diamond are also studied, namely the generation of second and third harmonic frequency. The thesis...
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Nonlinear optical properties of silicon nanostructures
Žídek, Karel ; Trojánek, František (advisor) ; Bryknar, Zdeněk (referee) ; Kuldová, Karla (referee)
Název práce: Nelineární optické vlastnosti křemíkových nanostruktur Autor: Karel Žídek Katedra (ústav): Katedra chemické fyziky a optiky Vedoucí disertační práce: Doc. RNDr. František Trojánek, Ph.D. E-mail vedoucího: trojanek@karlov.mff.cuni.cz Abstrakt: Disertační práce se zabývá nelineárními optickými jevy a ultrarychlým vývojem luminis- cence křemíkových nanokrystalů. Pomocí metody optického hradlování signálu (časové rozlišení až 250 fs) porovnáváme ultrarychlý vývoj luminiscence křemíkových nanokrystalů s různými ve- likostmi (v řádu jednotek nanometrů) a také s rozdílnými formami pasivace. Pro nanokrystaly, kde po excitaci dominuje vliv zachytávání nosičů do povrchových stavů nanokrystalu, navrhujeme teoretický popis závislosti rychlosti těchto procesů na vlastnostech nanokrystalů. Dále v práci podrobně zkoumáme působení Augerovy rekombinace, která se projevuje jak v časově rozlišené, tak i v časově integrované emisi vzorků. Experimentální data velmi dobře popisuje námi navržený model na bázi kinetických rovnic. Závěr práce se zaměřuje na zkoumání ultrarychle dohasínající stimulované emise. U stávajících metod měření optického zisku (VSL a SES) navrhujeme jejich rozšíření pro...
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Ultrafast processes in semiconductor nanocrystals
Dzurňák, Branislav ; Trojánek, František (advisor) ; Dohnalová, Kateřina (referee)
This diploma thesis deals with optical properties of silicon nanocrystals implanted in silicon oxide substrate. We examined samples with various concentrations of nanocrystals. We measured Raman spectra of our samples and identified size of nanocrystals and distance between them as function of depth. We measured absorption and reflection of samples and calculated the energy of band gap. For various implantation doses we examined temperature dependence of luminescence spectra. Two peaks were observed for excitation wavelength of 408 nm, the first shifts towards longer wavelength with increasing temperature, the second one stays unchanging. We observed low-temperature resonant luminescence in order to identify fonon structure. During observation of time-resolved luminescence two components of fast luminescence appeared - the slower in scale of nanoseconds, the faster in scale of picoseconds. We devoted to study of the faster component. For the faster component we observed up-converted luminescence. Intensity dependence of this component is quadratic. We also observe degradation of luminescence owing to strong laser beam. In conclusion we discussed origin of each component of luminescence spectra.
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