Home > Search Results: 999C1a:IBS2065017
Search:
Search Tips :: Advanced Search
Search collections:
Sort by: Display results: Output format:
National Repository of Grey Literature 3 records found  Search took 0.01 seconds. 
Imaging of semiconductor structures in environmental SEM
 Romanovský, Vladimír ; Hutař, Otakar
The charging effects are encountered very often when the semiconductor specimens are observed. There are several possibilities how to eliminate these undesirable phenomena. One of the newest methods how to suppress charging of specimens is environmental scanning electron microscopy (ESEM). Ionisation of gas molecules caused by impacts of primary beam electrons and signal electrons in the close vicinity of the specimen surface removes the surface charge. The ionisation detectors used in ESEM enable one to obtain similar information as in classical SEM.
Detailed record
Dimension measurement in a cathode lens equipped low-energy SEM
 Hutař, Otakar ; Oral, Martin ; Müllerová, Ilona ; Frank, Luděk
The paper deals with calibration of magnification in a cathode lens equipped SEM, which provides a high resolution in the energy range below 2000 eV, where both the charging-up and edge effect phenomena, complicating the measurement of dimensions, are suppressed. An analytical expression for the image magnification, in the dependence on the electron impact energy and the working distance, is derived and verified with respect to the measured values. Finally, a procedure suitable for the routine calibration is proposed.
Detailed record
Application of low-energy backscattered electron detection in the inspection of semiconductor devices technology
 Hutař, Otakar ; Oral, Martin ; Müllerová, Ilona ; Romanovský, Vladimír
The low energy backscattered electron (BSE) detector, equipped with an electrostatic immersion lens for the retardation of the primary electron beam (PE) was elaborated and used for the imaging of surface semiconductor device specimens in a commercial SEM. Despite the signal of BSE is generally lower than that obtained using secondary electrons (SE), the achieved results predestine this BSE detection method as a suitable tool for the inspection of the fine structures of semiconductor devices and linewidth measurement of critical dimension (CD).
Detailed record

Interested in being notified about new results for this query?
Subscribe to the RSS feed.
Digital Repository :: Search :: Submit :: Personalize :: Help
Powered by Invenio v1.1.2
Maintained by admin.invenio@techlib.cz
This site is also available in the following languages:
Česky  English