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	Zobrazování s vysokým rozlišením pomocí zpětně odražených elektronů v rastrovacím elektronovém mikroskopu Wandrol, Petr ; Matějková, Jiřina ; Rek, Antonín Article deals with the high resolution imaging by means of backscattered electrons (BSE) in the scanning electron microscope. Various systems for the detection of backscattered electrons are outlined. Special attention is paid to the scintillation BSE detector with YAG single crystal scintillator. Finally, high resolution images of various samples taken by this detector are presented. Detailed record
	Zobrazování nevodivých vzorků pomocí nízkoenergiových zpětně odražených elektronů v SEM Wandrol, Petr Article deals with the problems of imaging of non-conductive samples in the SEM that are caused mainly by charging. Use of the low primary beam energy and the observation by means of backscattered electrons are proposed as methods of suppression of charging artifacts in the image. Newly developed detector of backscattered electrons for the low energy SEM is described and images of uncoated non-conductive samples without charging artifacts taken by this detector are presented. Detailed record
	Pozorování nevodivých nano-struktur v rastrovacím elektronovém mikroskopu Wandrol, Petr ; Mika, Filip This paper deals with the observation of the non-conductive samples in the scanning electron microscope by the method of the critical energy finding by the cathode lens system and by the low energy backscattered electron detector. Both methods are described in detail and their advantages are shown by imaging of various non-conductive samples. Detailed record
	Nový detektor zpětně odražených elektronů pro nízkonapěťový SEM Wandrol, Petr ; Autrata, Rudolf This work deals with the description of the new scintillation detector of backscattered electrons for the low voltage scanning electron microscope. Detailed record
	Detekce signálních elektronů v nízkonapěťové SEM Wandrol, Petr ; Müllerová, Ilona This paper deals with the detection of signal electrons in the SEM at primary beam energies of 3 keV and less. Special attention is paid to the detection of backscattered electrons which is at low primary beam energies very problematic. Detailed record
	Pozorování vícevrstvých polovodičových struktur v rastrovacím elektronovém mikroskopu Wandrol, Petr ; Matějková, Jiřina ; Autrata, Rudolf This work deals with problems related to the observation of semiconductor specimens in the scanning electron microscope. It was found that the best method for the localization of defects in the semiconductor structure cross sections is the imaging of their material contrast by the scintillation detector of backscattered electrons. This detector also can effectively suppress the influence of specimen charging on the image. Detailed record

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