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National Repository of Grey Literature 3 records found  Search took 0.01 seconds. 
Lateral elongation of InAs/GaAs quantum dots studied by magnetophotoluminescence
 Křápek, V. ; Kuldová, Karla ; Oswald, Jiří ; Hospodková, Alice ; Hulicius, Eduard ; Humlíček, J.
We have investigated single layer InAs QDs on GaAs substrate grown by MOVPE by means of magnetophotoluminescence up to 24 T. Fitting the field-dependence of band positions, we have found the ratio of lateral sizes within 1.5 –1.7, and the effective mass of 0.04 – 0.05.
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Properties of InAs/GaAs quantum dots in vertically correlated structures with 2 QD layers grown by MOVPE
 Vyskočil, Jan ; Hospodková, Alice ; Pangrác, Jiří ; Oswald, Jiří ; Mates, Tomáš ; Melichar, Karel ; Šimeček, Tomislav ; Hulicius, Eduard
We have studied the shape of QDs in structures with vertically correlated QDs where two layers of QDs were grown. We investigated the influence of spacer thickness on lateral shape (elongation) of QDs and photoluminescence intensity.
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MOVPE InAs/GaAs quantum dots with long-wavelength emission
 Oswald, Jiří ; Kuldová, Karla ; Hospodková, Alice ; Hulicius, Eduard ; Pangrác, Jiří ; Mates, Tomáš ; Melichar, Karel ; Vyskočil, Jan
One method which enables the shift of photoluminescence spectra of InAs/GaAs quantum dots toward longer wavelengths is the covering of the dots by In.sub.x./sub.Ga.sub.1-x./sub.As strain reducing layer. With the increasing x we have observed the shift of PL maxima from 1.28 μm to 1.46 μm.
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