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Dynamické chování kontrastu dopantů v LVSEM
Mika, Filip ; Frank, Luděk
Contrast between differently doped areas in semiconductors can be observed in the secondary electron emission in a scanning electron microscope. Behaviour of the contrast in dependence on the incident electron dose and energy and on the presence of surface adlayers has been studied on different doped samples.
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Detekční strategie pro sběr sekundárních elektronů v REM
Konvalina, Ivo ; Hovorka, Miloš ; Wandrol, Petr ; Mika, Filip ; Müllerová, Ilona
In the scanning electron microscope (SEM), the secondary electrons (SE) are usually detected by the Everhart-Thornley (ET) type detector, using a weak electrostatic field to attract low energy SE let us call it the standard system. This principle is employed for more than forty years. Modern SEMs achieve their improved image resolution by allowing the strong magnetic field of the objective lens (OL) to penetrate to the specimen surface (so called immersion system). Two SE detectors are usually used in this case: one is below the OL just as the standard ET detector (lower detector) and the other is positioned above the OL (upper detector). The final contrast of SE images for the same specimen varies with the energy and angular sensitivity of the detectors, connected with specific distributions of the electrostatic and magnetic fields in the specimen region.
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Režim katodové čočky v rastrovacím elektronovém mikroskopu
Müllerová, Ilona
Electron optical characteristics of the cathode lens mode, enabling one to decelerate the electron beam bombarding the specimen in a scanning electron microscope down to arbitrarily low energies, are summarized. Contrast mechanisms appearing at very low energies below 100 eV are described, together with detection strategies capable of acquiring these contrasts. Illustration examples are provided.
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Quantification of the dopant in semiconductor in SEM
Mika, Filip ; Frank, Luděk
The dopant contrast in SEM has now been studied for more than a decade, a clear explanation of it remains a matter for the future. The angular dependence of the contrast has also not been fully clarified. Generally, p-type silicon appears brighter in the secondary electron (SE) emission than n-type. This study aims to examine the contrast behaviour with the emission angle.
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