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Electrical characterization of a unipolar transistor with a graphene channel
Žeravík, František ; Lednický, Tomáš (referee) ; Gablech, Imrich (advisor)
This work deals with basic properties of graphene, methods of its synthesis, doping, transfer, characterization and description of basic properties and fabrication of field-effect transistor with graphene channel. The practical part focuses on electrical characterization of a field-effect transistor with graphene channel. Concretely on measuring the channel resistance, its dependence on gate voltage, finding the Dirac point and determining the dependence of the channel conductivity on the annealing lenght. Lastly, the shift of the Dirac point and the change of the electrical properties of graphene during bending of a MEMS structure with a unipolar transistor with a graphene channel are investigated.
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Curvature correction of the BandGap reference output voltage
Žeravík, František ; Háze, Jiří (referee) ; Prokop, Roman (advisor)
This thesis deals with the design of a Brokaw BandGap reference, a BandGap reference in a simple CMOS process, as well as the respective compensation circuits for correcting the curvature of the output voltage. In the theoretical part, the emphasis is mainly on describing the temperature dependency of the UBE voltage of the bipolar transistor and understanding the principle of the elementary BandGap reference. Based on these findings, the function and design of both BandGap references for an output voltage of 1.5 V are described. In the second part, the thesis focuses on describing various methods for correcting the curvature of the output voltage. Based on these methods, the first-order BandGap references supplemented with compensation circuits are designed. In the conclusion, the resulting parameters of the designed BandGap references without correction and with a compensation circuit are summarized and compared.
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Electrical characterization of a unipolar transistor with a graphene channel
Žeravík, František ; Lednický, Tomáš (referee) ; Gablech, Imrich (advisor)
This work deals with basic properties of graphene, methods of its synthesis, doping, transfer, characterization and description of basic properties and fabrication of field-effect transistor with graphene channel. The practical part focuses on electrical characterization of a field-effect transistor with graphene channel. Concretely on measuring the channel resistance, its dependence on gate voltage, finding the Dirac point and determining the dependence of the channel conductivity on the annealing lenght. Lastly, the shift of the Dirac point and the change of the electrical properties of graphene during bending of a MEMS structure with a unipolar transistor with a graphene channel are investigated.
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