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Alternative approaches for Preparation of AlN Nanolayers by Atomic Layer Deposition
Dallaev, Rashid ; Krčma, František (oponent) ; Kolařík, Vladimír (oponent) ; Sedlák, Petr (vedoucí práce)
Aluminum nitride (AlN) is a promising semi-conductive material with a wide band gap. Thin films of AlN find implementation in a variety of electronic and optoelectronic devices. First and foremost, the aim of the research presented within the scope of this dissertation is to introduce new precursors into ALD process for deposition of AlN thin films. The proposed precursors are superior to traditional ones either in cost-efficiency or reactivity. A part of the dissertation is devoted to enhancement of the understanding of chemical processes which take place during and after deposition. In this regard, a working solution to improving the chemical composition of the resulting films, as well as ameliorating deficiencies, for instance, oxidization, has been proposed. Another important aspect of this study has to do with a thorough analysis of hydrogen phenomenon in AlN ALD thin films. Hydrogen impurities have been investigated with the use of accurate and advanced techniques belonging to ion-beam analysis (IBA) groups.
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Extended defects in Ga and Al nitrides
Vacek, Petr ; Holec, David (oponent) ; Hospodková,, Alice (oponent) ; Gröger, Roman (vedoucí práce)
III-nitrides crystallize in the hexagonal (wurtzite) structure, whereas the cubic (zincblende, sphalerite) structure is metastable with only slightly higher energy. Their physical properties are strongly affected by the presence of extended defects that are of different kinds in the two structures. In wurtzite III-nitrides, these are primarily threading dislocations, some of which are known to generate deep defect states in the bandgap, through which they affect the electrical and optoelectronic properties of devices. On the other hand, zincblende III-nitrides contain a large density of stacking faults that facilitate local transformations into the more stable wurtzite structure. The aim of this work is to characterize the extended defects in both crystal structures using a combination of electron microscopy, atomic force microscopy, and X-ray diffraction. We demonstrate that (0001)-oriented samples of GaN/AlN and AlN grown on Si (111) substrate by metal-organic chemical vapor deposition contain a large density of threading dislocations. Their Burgers vectors are mostly parallel to the a-direction of the wurtzite lattice, followed by the Burgers vectors parallel to the a+c-direction, whereas the dislocations with Burgers vectors parallel to the c-direction are relatively rare. The probable origin of threading dislocations is discussed according to the type of the film growth. Prismatic stacking faults were found in thin AlN nucleation layers but were not present in the thicker layers. Amorphous layer composed of SiNx and partially of AlN was found at the AlN/Si interface. We propose that this amorphous layer could have a major role in the relief of misfit strain. Analysis of electrical activity of extended defects in AlN was done using electron beam induced current technique. We have found that threading dislocations cause a weak drop of induced current. However, due to their high density and uniform distribution, they have larger impact on electrical properties than V-defects and their clusters. The topographical and crystallographic defects were studied in as-grown and annealed nucleation layers of zincblende GaN grown on 3C-SiC (001) / Si (001) substrate. The sizes of surface features on as-grown samples increase with the thickness of the nucleation layer and are enhanced by annealing. The surface coverage of GaN with the thinnest nucleation layers is reduced after annealing due to diffusion and desorption (or etching by reactor atmosphere). The stacking faults found in GaN near its interface with SiC were mostly of the intrinsic type bounded by Shockley partial dislocations. The origin of these stacking faults was discussed as well as the impact of partial dislocations on the strain relief. Due to the abundance of stacking faults, their interactions were studied in detail. Based on our findings, we have developed a theoretical model of stacking fault annihilation in zincblende GaN films. This model is shown to be able to predict the decrease of the stacking fault density with increasing film thickness.
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Depozice Al a AlN ultratenkých vrstev na křemíkový a grafenový substrát
Řihák, Radek ; Čech, Vladimír (oponent) ; Mach, Jindřich (vedoucí práce)
Tato diplomová práce se zabývá přípravou a analýzou ultratenkých vrstev hliníku a nitridu hliníku. Vrstvy byly připraveny depozicí z efuzních cel navržených v rámci předchozí bakalářské práce autora. Jejich konstrukce a testování je v práci rovněž zahrnuta. Experimentálně byly zkoumány vlastnosti hliníkových vrstev na nativním oxidu křemíku, křemíku a grafenu. Rovněž je zde popsána příprava nitridu hliníku pomocí dusíkového iontového zdroje.
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Alternative approaches for Preparation of AlN Nanolayers by Atomic Layer Deposition
Dallaev, Rashid ; Krčma, František (oponent) ; Kolařík, Vladimír (oponent) ; Sedlák, Petr (vedoucí práce)
Aluminum nitride (AlN) is a promising semi-conductive material with a wide band gap. Thin films of AlN find implementation in a variety of electronic and optoelectronic devices. First and foremost, the aim of the research presented within the scope of this dissertation is to introduce new precursors into ALD process for deposition of AlN thin films. The proposed precursors are superior to traditional ones either in cost-efficiency or reactivity. A part of the dissertation is devoted to enhancement of the understanding of chemical processes which take place during and after deposition. In this regard, a working solution to improving the chemical composition of the resulting films, as well as ameliorating deficiencies, for instance, oxidization, has been proposed. Another important aspect of this study has to do with a thorough analysis of hydrogen phenomenon in AlN ALD thin films. Hydrogen impurities have been investigated with the use of accurate and advanced techniques belonging to ion-beam analysis (IBA) groups.
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Extended defects in Ga and Al nitrides
Vacek, Petr ; Holec, David (oponent) ; Hospodková,, Alice (oponent) ; Gröger, Roman (vedoucí práce)
III-nitrides crystallize in the hexagonal (wurtzite) structure, whereas the cubic (zincblende, sphalerite) structure is metastable with only slightly higher energy. Their physical properties are strongly affected by the presence of extended defects that are of different kinds in the two structures. In wurtzite III-nitrides, these are primarily threading dislocations, some of which are known to generate deep defect states in the bandgap, through which they affect the electrical and optoelectronic properties of devices. On the other hand, zincblende III-nitrides contain a large density of stacking faults that facilitate local transformations into the more stable wurtzite structure. The aim of this work is to characterize the extended defects in both crystal structures using a combination of electron microscopy, atomic force microscopy, and X-ray diffraction. We demonstrate that (0001)-oriented samples of GaN/AlN and AlN grown on Si (111) substrate by metal-organic chemical vapor deposition contain a large density of threading dislocations. Their Burgers vectors are mostly parallel to the a-direction of the wurtzite lattice, followed by the Burgers vectors parallel to the a+c-direction, whereas the dislocations with Burgers vectors parallel to the c-direction are relatively rare. The probable origin of threading dislocations is discussed according to the type of the film growth. Prismatic stacking faults were found in thin AlN nucleation layers but were not present in the thicker layers. Amorphous layer composed of SiNx and partially of AlN was found at the AlN/Si interface. We propose that this amorphous layer could have a major role in the relief of misfit strain. Analysis of electrical activity of extended defects in AlN was done using electron beam induced current technique. We have found that threading dislocations cause a weak drop of induced current. However, due to their high density and uniform distribution, they have larger impact on electrical properties than V-defects and their clusters. The topographical and crystallographic defects were studied in as-grown and annealed nucleation layers of zincblende GaN grown on 3C-SiC (001) / Si (001) substrate. The sizes of surface features on as-grown samples increase with the thickness of the nucleation layer and are enhanced by annealing. The surface coverage of GaN with the thinnest nucleation layers is reduced after annealing due to diffusion and desorption (or etching by reactor atmosphere). The stacking faults found in GaN near its interface with SiC were mostly of the intrinsic type bounded by Shockley partial dislocations. The origin of these stacking faults was discussed as well as the impact of partial dislocations on the strain relief. Due to the abundance of stacking faults, their interactions were studied in detail. Based on our findings, we have developed a theoretical model of stacking fault annihilation in zincblende GaN films. This model is shown to be able to predict the decrease of the stacking fault density with increasing film thickness.
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Depozice Al a AlN ultratenkých vrstev na křemíkový a grafenový substrát
Řihák, Radek ; Čech, Vladimír (oponent) ; Mach, Jindřich (vedoucí práce)
Tato diplomová práce se zabývá přípravou a analýzou ultratenkých vrstev hliníku a nitridu hliníku. Vrstvy byly připraveny depozicí z efuzních cel navržených v rámci předchozí bakalářské práce autora. Jejich konstrukce a testování je v práci rovněž zahrnuta. Experimentálně byly zkoumány vlastnosti hliníkových vrstev na nativním oxidu křemíku, křemíku a grafenu. Rovněž je zde popsána příprava nitridu hliníku pomocí dusíkového iontového zdroje.
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Charakterizace nanostruktur deponovaných vysokofrekvenčním magnetronovým naprašováním
Hégr, Ondřej ; Boušek, Jaroslav (vedoucí práce)
Práce se zabývá analýzou nanostrukturovaných vrstev, deponovaných na povrch monokrystalického křemíku pomocí vysokofrekvenčního magnetronového naprašování. Obsah práce je zaměřen na aplikaci magnetronového naprašování jako alternativní metody pro depozici pasivačních a antireflexních vrstev na křemíkových solárních článcích. Je navržen postup pro předdepoziční čištění povrchů křemíkových substrátů plazmatickým leptáním v prostředí Ar/H2 a reaktivní depozici hydrogenovaných vrstev nitridu křemíku a nitridu hliníku ve směsi plynů Ar/N2/H2. Část práce je věnována popisu experimentálních depozic pseudokarbidových vrstev z křemíkového terče a reaktivního acetylenu (C2H2) v průmyslových podmínkách. Velký důraz je kladen na zkoumání vlastností vrstev a vytvářených poměrů na rozhraní křemík-vrstva za pomoci několika standardních a speciálních měřících metod. Strukturální složení naprašovaných vrstev je analyzováno moderními metodami rentgenové spektroskopie (XPS) a Fourierovské infračervené spektroskopie (FTIR). Pro diagnostiku optických vlastností naprašovaných vrstev v závislosti na vlnových délkách dopadajícího světla jsou vrstvy měřeny pomocí optické elipsometrie a spektrofotometrie. Zkoumání pasivačních účinků naprašovaných vrstev je zajišťováno speciální metodou pro měření plošného rozložení doby života nosičů náboje v objemu a na povrchu křemíkových substrátů (MW-PCD).
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