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Schottky solar cells with interface graphene/Si modified by gallium
Hlavička, Ivo ; Lišková, Zuzana (referee) ; Mach, Jindřich (advisor)
Main focus of this bachelor thesis is on fabrication, characterization and modification of graphene-on-silicon Schottky solar cells. By transfering CVD graphene onto silicon wafer with electrodes, a basic Schottky junction was created. The junction was then modified by annealing in UHV chamber as well as by gallium deposition. Information about power conversion efficiency of such Schottky solar cells was then obtained by IV measurement. Schottky junction itself was analyzed using X-EBIC method.
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Preparation of 2D heterostructures
Ředina, Dalibor ; Hrabovský, Miloš (referee) ; Bartoš, Miroslav (advisor)
This bachelor's thesis refers about preparation of 2D hetestructures here at the IPE, BUT. The first theoretical part deals with properties of graphene, molybdenum disulfide and 2D heterostructures in general. Comprehensive overview is provided by basic facts about properties and allotropic modifications of carbon. Next part of this thesis outlines methods used in the fabrication of heterostructures and highlights presumably the best one. Experimental part deals with optimization of this method. Successive steps of this method are improved by various adjustments in order to achieve the highest success rate in the fabrication of these heterostructures. Result of this approach is stated in this thesis.
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Study of interface graphene-on-silicon by EBIC method
Hammerová, Veronika ; Lišková, Zuzana (referee) ; Mach, Jindřich (advisor)
This bachelor thesis is dedicated to study of interface graphene-on-silicon located on solar cell with graphene layer. The interface was studied by EBIC method and Raman spectroscopy. Solar cells with graphene sheet was fabricated using electron litography, chemical etching and graphene made by CVD method. The thesis describes fabrication of solar cells with graphene layer, method EBIC measured on SEM and analysis of changes graphene-on-silicon interface caused by enlightenment electron beam by Raman spectroscopy. In theorethical part is described p-n junction and Schottky junction of solar cell, graphene and its fabrication, as well as EBIC method fundamentals.
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The graphene structures suitable for field effect transistors
Kurfürstová, Markéta ; Bartošík, Miroslav (referee) ; Mach, Jindřich (advisor)
This bachelor’s thesis is focused on preparation of graphene structures suitable for field effect transistors. In the first section, graphene is characterized in terms of its properties and prepataion methods. The second part sums up semiconductor technology, focusing on transistors with graphene layer. Next, electron beam litography method is presented, which had been used for preparation of the structures. Finally, an experimental procedure of graphene structures manufacture is described.
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Design of the atomic source producing carbon beams for deposition of graphene in UHV conditions
Horáček, Matěj ; Kolíbal, Miroslav (referee) ; Mach, Jindřich (advisor)
This bachelor's thesis deals with the design of the atomic source of carbon beams for deposition of graphene in UHV conditions. In the first part, problems on the growth of ultrathin layers, the theory of atomic beams and molecular beam epitaxy are described. The second part is aimed to graphene layers - especially the growth of graphene using molecular beam epitaxy. In the third part, the detection of carbon atomic beams is discussed. The practical part of this bachelor's thesis deals with the design and the construction of high-temperature atomic source of carbon. In the conclusion the obtained results are discussed.
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Preparation of graphene layers by various methods and characterization of their properties
Zahradníček, Radim ; Bartošík, Miroslav (referee) ; Lišková, Zuzana (advisor)
This bachelor's thesis deals with the production of graphene by different methods. Graphene was prepared by mechanical exfoliation and chemical methods. Graphene oxide (GO) was first prepared by modified Hummers method and disolved the solution in isopropyl alcohol. It was subsequently reduced by photoreduction, UV radiation and thermal reduction. Produced graphene samples were characterized using optical microscopy, electron microscopy, atomic force microscopy, Raman spectroscopy and X$-$ray photoelectron spectroscopy. Measurement results and evaluation of production quality of graphene are shown in this work.
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Examination of Graphene with Very Slow Electrons
Mikmeková, Eliška ; Frank, Luděk
Although graphene has been available and intensively studied for nearly a full decade, new methods are still required for its examination and diagnostics. Even checking the continuity of layers and the reliable counting of layers of graphene and other 2D crystals should be easier to perform. Scanning electron microscopy with slow and very slow electrons offers an innovative tool enabling one to see graphene samples at nanometer or even sub-nanometer lateral resolution in both transmitted and reflected electrons and to count the number of layers reliably in both imaging modes. Diagnostics can be performed in this way on freestanding graphene samples as well as on graphene grown on the surfaces of bulk substrates. Moreover, bombardment with very slow electrons acts as an ultimate cleaning procedure removing adsorbed gases from crystal surfaces which can be monitored in scanned transmission electron images taken at below 50 eV.
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Microscopic characterization of graphene material and electronic quality across neighbouring, differently oriented copper grains
Čermák, Jan ; Yamada, T. ; Ganzerová, Kristína ; Rezek, Bohuslav
We study graphene grown across the boundary of three such grains having bright, medium, and dark color in reflection. Raman micro-spectroscopy proves presence of mostly a monoor bi-layer graphene on all the grains. Yet intensity of Raman 2D band is grain-dependent: highest at the darkest grain and lowest at the brightest one. Contrary, conductive atomic force microscopy detects the highest conductivity at the brightest grain and the lowest current at the darkest grain. This is attributed to dominant electrical current path through graphene and underlying oxide thickness of which also depends on the type of copper grain. We correlate and discuss the results with view to better understanding of graphene growth and electronic properties on large area copper substrates.
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