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Optical properties of the GaN on sapphire
Skalský, Miroslav ; Janta, Jiří ; Čtyroký, Jiří ; Stejskal, J. ; Hüttel, I.
The method of mode spectroscopy was used to measure optical properties of epitaxial layers of gallium nitride (GaN) deposited onto the sapphire substrate. The results of the measurement of the layer thickness, refractive indices, and the attenuation of guided modes at the wavelengths of 632.8 nm and 781 nm are presented. From experimental values of attenuation of different guided modes, the contributions of bulk absorption and scattering at the interfaces of the layer to the total optical loss in the waveguide are determined.
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Thin Films of Sb2S3 Doped by Sm3+ Ions
Frumarová, Božena ; Bílková, M. ; Frumar, M. ; Repka, M. ; Jedelský, J.
Pure and Sm3+ doped amorphous thin films of Sb2S3 were prepared by thermal co-evaporation of Sb2S3 and Sm metal. From transmittance measurement, the absorption edge, index of refraction, thickness , Eg opt relative permittivity, single oscillator energy and dispersion energy were determined.
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