National Repository of Grey Literature 201 records found  beginprevious182 - 191next  jump to record: Search took 0.00 seconds. 
Modification of Bi.sub.2./sub.Te.sub.3./sub. nanolayers
Zeipl, Radek ; Pavelka, Martin ; Jelínek, Miroslav ; Vaniš, Jan ; Šroubek, Filip ; Walachová, Jarmila
Our Bi.sub.2./sub.Te.sub.3./sub. nanolayers were prepared by laser ablation. If we use different depositon condition, prepared layers will have different properties, exactly with rising temperature of substrate during deposition laeyrs becoming smoother. We present STM picture of 60nm thick Bi.sub.2./sub.Te.sub.3./sub. prepared on substrate with temperature during deposition of 400.sup.0.sup.C. We also present modification of layer after many scans were realized by STM on the same place.
Thickness dependence of transport properties of Bi.sub.2./sub.Te.sub.3./sub. layers
Zeipl, Radek ; Lošťák, P. ; Pavelka, Martin ; Žďánský, Karel ; Jelínek, Miroslav ; Walachová, Jarmila
The transport properties of layers, prepared by laser ablation, as Hall mobility and conductivity on their thickness at room temperature are presented. This thermoelectric materials is potential candidate for many applications as for thermoelectric devices for power generation, cooling and sensors.
Thickness dependence of transport properties of Bi.sub.2./sub.Te.sub.3./sub. layers
Zeipl, Radek ; Lošťák, P. ; Pavelka, Martin ; Žďánský, Karel ; Jelínek, Miroslav ; Walachová, Jarmila
The transport properties of layers, prepared by laser ablation, as Hall mobility and conductivity on their thickness at room temperature are presented. This thermoelectric materials is potential candidate for many applications as for thermoelectric devices for power generation, cooling and sensors.
Optical properties of the GaN on sapphire
Skalský, Miroslav ; Janta, Jiří ; Čtyroký, Jiří ; Stejskal, J. ; Hüttel, I.
The method of mode spectroscopy was used to measure optical properties of epitaxial layers of gallium nitride (GaN) deposited onto the sapphire substrate. The results of the measurement of the layer thickness, refractive indices, and the attenuation of guided modes at the wavelengths of 632.8 nm and 781 nm are presented. From experimental values of attenuation of different guided modes, the contributions of bulk absorption and scattering at the interfaces of the layer to the total optical loss in the waveguide are determined.
Thin Films of Sb2S3 Doped by Sm3+ Ions
Frumarová, Božena ; Bílková, M. ; Frumar, M. ; Repka, M. ; Jedelský, J.
Pure and Sm3+ doped amorphous thin films of Sb2S3 were prepared by thermal co-evaporation of Sb2S3 and Sm metal. From transmittance measurement, the absorption edge, index of refraction, thickness , Eg opt relative permittivity, single oscillator energy and dispersion energy were determined.

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