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Towards highly-doped Ge and ZnO nanowires: Growth, characterization and doping level analysis
Pejchal, Tomáš ; Mikulík,, Petr (referee) ; Grym,, Jan (referee) ; Kolíbal, Miroslav (advisor)
Vysoce dopovaná polovodičová nanovlákna představují nadějnou třídu nanostruktur pro budoucí aplikace v elektronice, optoelektronice nebo bio-senzorice. Tato práce se zaměřuje na přípravu a charakterizaci nanovláken germania a oxidu zinečnatého s cílem dosáhnout vysoké úrovně dopování. Úvodní část dizertační práce se zabývá přípravou germaniových nanovláken metodou VLS (pára – kapalina – pevná látka). Nejprve jsou popsány faktory ovlivňující růst nanovláken a jejich morfologii – složení katalytické částice, vliv adsorbovaných atomů či molekul a potenciální inkorporace atomů katalyzátoru do objemu nanovláken. Nanovlákna připravená ze zlatých katalytických nanočástic v podmínkách ultravysokého vakua (tzv. MBE metodou) a za přítomnosti atomárního vodíku (proces napodobující podmínky CVD metod) vykazují odlišnou morfologii a směr růstu. Tyto rozdíly odhalují kombinovaný účinek adsorpce atomárního vodíku a šíření zlatého katalyzátoru na stěny nanovláken. Tento efekt je klíčový pro vysvětlení rozdílů ve výsledné morfologii nanovláken připravených MBE a CVD metodami. Další část práce se věnuje přípravě Ge nanovláken z katalyzátorů obsahujících prvky III. skupiny a studiu jejich případné inkorporace, která by mohla vést k dopování nanovláken. Bylo zjištěno, že in-situ připravené směsné Au–Ga nanočástice lze úspěšně využít pro růst germaniových nanovláken, přestože stabilita katalyzátoru je nižší než v případě čistého zlata. I přes vysokou koncentraci gallia v katalytické částici nebyla pozorována inkorporace gallia do objemu nanovlákna. Tato metoda dopování nanovláken se tedy pro uvedenou materiálovou kombinaci ukázala jako nevhodná. Ve třetí části práce jsou popsány výsledky charakterizace ZnO nanodrátů a vývoj metody jejich difuzního dopování galliem. Je prokázán vliv žíhání nanodrátů na koncentraci kyslíkových vakancí (VO) – ve srovnání s žíháním v podmínkách vysokého vakua se koncentrace VO snižuje žíháním v plynném peroxidu vodíku. Dále je zdokumentována inkorporace gallia do ZnO nanodrátů při teplotě nad 350 °C – pozorováno pomocí in-situ SEM. Při teplotě nad 450 °C dochází ke galliem indukované dekompozici ZnO nanodrátů. K určení koncentrace a prostorového rozložení Ga atomů v nanovláknech je využito teoretického difuzního modelu a STEM EDS měření nanovláken. Byla nalezena korelace mezi koncentrací kyslíkových vakancí a inkorporací gallia do objemu ZnO nanovláken. Koncentrace gallia dosahuje řádově 10^21 cm^-3, což dokazuje vhodnost použité metody pro dosažení vysokých úrovní dopování, které jsou potřebné pro budoucí bio-senzorické aplikace v infračervené oblasti.
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Preparatin of dopped lead-free piezoceramic materials by non-conventional sintering methods
Žaludek, Jakub ; Kachlík, Martin (referee) ; Pouchlý, Václav (advisor)
Piezoceramics BaTiO3 doped with ZrO2 was studied in this thesis. Six different compositions were prepared from base powders of BaTiO3 and ZrO2. with 10, 20, 40, 60, 80 and 90 wt% ZrO2. These mixtures were sintered using convetional sintering method and by Spark Plasma Sintering. Resuting ceramic compacts were subjected to measuring of density, dielectric constant, permitivity, polarization P-E curves, piezoelekctric faktor, loss factor and dilatometric measurements. From these results can be said that i tis possible to create piezoceramic BaTiO3 doped by ZrO2 with relative density higher than 94 %t.d. and these ceramics can possess piezoelectric properties. Value of highest piezoelectrick factor 33=9 / was achieved with addition of 20 wt% ZrO2. Dilatometric measurements discovered effect of increasing ammount of ZrO2 in BaTiO3. Rising amount of ZrO2 had a lowering effect on initial sintering temperature and materials achieved higher relative densities. This was also true for samples sintered using SPS, where it was less obvious. Measuring of electrical properties discoverad electric conductivity for SPS sintered samples, which was most probably caused by carbon introduced into samples during SPS cycle.
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Fabrication and properties of doped piezoceramics based on BaTiO3
Mařák, Vojtěch ; Chlup, Zdeněk (referee) ; Drdlík, Daniel (advisor)
This diploma thesis deals with the preparation of doped piezoceramic materials based on BaTiO3 using electrophoretic deposition. Five rare earth oxides, i.e. Er2O3, Dy2O3, Eu2O3, Tb407 and CeO2, were used as dopants in amounts of 1, 3, and 5 wt. %. The prepared deposits were evaluated in terms of preparation methodology, high temperature dilatometry, X-ray diffraction analysis, relative density, mean grain size, hardness and fractographic analysis. The study of dilatometric curves described the sintering behavior and its changes at different material compositions. X-ray diffraction analysis revealed a tetragonal phase in all samples; the tetragonality of the BaTiO3 crystalline cell decreased with dopant content. By a suitable choice of dopant, it was possible to significantly increase the relative density of sintered samples, their hardness and at the same time prevent the samples from coarsening of the microstructure during heat treatment. A relative density up to 98 %, a mean grain size below 1 m and a hardness of over 10 GPa were achieved. Analysis of the fracture surfaces revealed that the fracture mode was transcrystalline for the most of studied materials; only the samples doped with cerium dioxide had fracture surfaces with both transcrystalline and intercrystalline fracture modes. Based on the obtained results, a suitable composition of the material for the intended use in a layered piezoceramic harvester was identified, which, in addition to the BaTiO3 layers, consists of functionally-protective Al2O3 and ZrO2 layers.
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Processing and properties of transparent polycrystalline ceramic materials
Tásler, Jan ; Pouchlý, Václav (referee) ; Maca, Karel (advisor)
The presented diploma thesis is focused on the preparation and properties of transparent polycrystalline ceramic materials based on Al2O3. Theoretically, the most important technological aspects of the processing of these materials are presented. Detailed attention is given to transparent Al2O3 polycrystalline ceramics doped with rare earth elements. The influence of microstructural parameters on the optical properties (represented by RIT) is investigated on Al2O3 samples doped and codoped with dysprosium, terbium and chromium. A significant effect of the average grain size on the light transmittance of all samples is observed. The highest RIT = 55 % (measured by a laser beam with a wavelength of 632,8 nm) was achieved by an optimized preparation process for a sample doped with 0,05 at. % of dysprosium. For all samples photoluminescent properties are also analysed. The photoluminescent emission spectra correspond to the activation of doping elements. In case of the terbium and chromium codoped samples, the differences in the activation of individual dopants depending on different excitation wavelengths were demonstrated, resulting in different colour emissions for different excitation wavelengths.
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Doped ceramic substrates for plasma aplications
Hliničan, Jan ; Šťastná, Eva (referee) ; Šťastný, Přemysl (advisor)
This bachelor thesis summarizes findings on subject: Doped ceramic substrates for plasma aplications. The thesis is divided into two parts. The first part is a literary research focused on topic: production of thin ceramic tapes by tape casting and their use. The second part is experimental. It deals with the preparation of alumina tapes doped with magnesium spinel (MgAl2O4) in different amounts. Phase composition and microstructure will be evaluated on prepared structures. The prepared samples will be used for the production of electrodes for atmospheric plasma discharge.
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Printed transparent oxide conductors
Bartoš, Radim ; Pekárková, Jana (referee) ; Dzik, Petr (advisor)
Thin films of tin oxide doped by fluorine or antimony were prepared by spincoating technique and material printing technique. Plenty of inorganic and organic coumpouds were used as precursors of fluorine and antimony. Sheet resistence of films were measured by 4-probe method and film thickness were determined by contact profilometer. Films were analyzed by Xray diffraction (XRD) and scan electron microscopy (SEM).
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The hydrogen modification of the graphene structures for field effect transistors
Kurfürstová, Markéta ; Čermák,, Jan (referee) ; Mach, Jindřich (advisor)
This master’s thesis is focused on the subject of graphene modified with atomic hydrogen and its electronic transport properties. Structural and electronic properties of graphene and hydrogenated graphene are compared in the theoretical part of the thesis. The Raman spectroscopy technique is described, including characterization of typical Raman spectra of both unmodified and modified graphene. Samples used during experimental part of the thesis are prepared via laser and electron lithography, and are set to be measured in a vacuum chamber. Subsequently, electronic transport properties are measured before and after hydrogen modification of graphene. Finally, hydrogenated graphene is irradiated using electron beam and changes in its structure are analyzed with Raman spectroscopy techniques.
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Organic tranistors for sensorics
Marková, Aneta ; Omasta, Lukáš (referee) ; Vala, Martin (advisor)
The aim was to find the best available commercial formulation of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) and methods and subsequent treatment of thin films for organic electrochemical transistors (OECT). These films will be used in bioelectronic sensors to measure the physiological function of cardiomyocytes. Studied material was PEDOT:PSS in six different formulations. Thin layers prepared by spin coating were modified in three ways, namely (i) immersion in ethylene glycol, (ii) drying and (iii) a combination of drying and ethylene glycol. The layers were then tested for the influence of ethylene glycol, thermal stability, the impact of storage, influence of aqueous medium, and additional thermal annealing. According to the results obtained, the most suitable treatment of most materials was immersion in ethylene glycol followed by thermal annealing of the layer. It was found that the most appropriate material formulation was Sigma Aldrich 739 316 treated by the combination of drying, immersion in ethylene glycol and thermal annealing.
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Deposition of the thin films for applications of advanced oxidation processes using metal dopants
KRAJČOVIČ, Jan
The aim of this diploma thesis is deposition of TiO2 thin films onto different types and sizes of substrates, and some of these layers dope by iron or silver. During the work was range of TiO2 layers created using a method of physical vapor deposition namely magnetron sputtering. For these processes was chosen the Dreva ARC 400 Hard Material Coating Plant device. The main aim of these depositions was to attempt to create TiO2 thin films on a substrates of larger surface than its in average laboratory processes usual. For this purpose were TiO2 layers deposited onto square glass plates of side length 10 cm. For comparsion and analysis were also as a substrates used microscope slides and fragments of silicon wafers. These substrates were used for testing of photocatalytic activity and on surface morphology (SEM). The theoretical part of this thesis aims to a methods of deposition TiO2 layers and their characteristics. In the experimental part is the used coating equipment and parameters of each deposition process described. Further the characteristics and results of individual experiments are described.
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