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Tvorba mikro a nanoporů v polovodičích A.sup.3./sup. B.sup.5./sup
Nohavica, Dušan ; Gladkov, Petar ; Zelinka, Jiří ; Dvořák, Martin ; Pirov, J.
Electrochemically etched pores are accessible also in A.sup.3./sup. B.sup.5./sup. semiconductors. In particular, pores in InP, GaAs and GaP have been investigated in our laboratory. More complex experimental data have been collected for InP which is suitable for the preparation almost self organized pores net. Pores multilayer containing current oriented and/or crystallographic pores was prepared and some details of the process are discussed. The GaAs and GaP demonstrate both, current oriented and crystallographic pores as well with specific differences.

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