"Optické vlastnosti pevných látek v základním výzkumu a aplikacích /10./" - Search Results - Digital Repository

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	Glasses of the Ge-Bi-S system doped by Pr3+ ions Šourková, P. ; Frumarová, Božena ; Frumar, M. New glasses of Ge-Bi-S systems doped by Pr3+ ions were prepared. Their optical and thermal properties were studied. Detailed record
	Amorphous chalcogenide thin films doped by Sm3+ ions Frumarová, Božena ; Frumar, M. ; Šourková, P. ; Vlček, M. Pure and Sm3+ doped amoprhous thin films of Sb2S3 and GeS2-Sb2S3 systems were prepared by thermal co-evaporation. Optical properties of this films were studied. Detailed record
	Measurement of electro-optical properties of quantum-size structures based on InAs/GaAs - photocurrent and electroluminescence Mačkal, Adam ; Hazdra, P. ; Hulicius, Eduard ; Oswald, Jiří ; Pangrác, Jiří ; Melichar, Karel ; Hospodková, Alice ; Šimeček, Tomislav Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperatures. The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range (above 100řC). Detailed record

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