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Microelectromechanical through-silicon vias
Dulák, Radovan ; Hrdý, Radim (oponent) ; Prášek, Jan (vedoucí práce)
Through-hole silicon vias are key technology enabling 3D system integration and thus creating compact devices. These vertical microstructures interconnect multiple layers and are also used in integrated circuits and MEMS devices. This bachelor‘s thesis focuses on the possibility of preparing these microjunctions by wet anisotropic etching and dry anisotropic etching using the deep reactive ion etching (DRIE) process for use in MEMS. The work shows preparation, etching, plating and galvanic filling of these structures. Using optical and scanning electron microscope (SEM) images, experimental tests and subsequent optimization were performed and evaluated to create a hole with a minimum size of approximately 1 m using a wet etching process and 16 m by a dry etching process. The highest achieved aspect ratio on a wafer was 15:1. In addition, the created holes were plated, galvanically filled with conductive material and electrically tested and measured.

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