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Photoconductivity, photoluminescence and charge collection in semiinsulating CdTe and CdZnTe
Zázvorka, Jakub ; Franc, Jan (advisor) ; Humlíček, Josef (referee) ; Oswald, Jiří (referee)
Title: Photoconductivity, photoluminescence and charge collection in semiinsulating CdTe and CdZnTe Author: Jakub Zázvorka Department: Institute of Physics of Charles University Supervisor of the doctoral thesis: prof. Ing. Jan Franc, DrSc., Institute of Physics of Charles University. Abstract: Cadmium telluride and its compounds with zinc are the material of choice in spectroscopic room temperature high energy radiation detectors. The development of the final device is influenced by many parameters, including material impurities and defects, homogeneity and surface preparation. This thesis offers a comprehensive investigation of the detector fabrication process and of the parameters and physical effects influencing the spectroscopic resolution and performance of the detector. Structure of deep levels is investigated through photoluminescence and correlated with other electro-optical measurements dealing with the impact of structural imperfections of the material and their effect. The influence of resistivity and photoconductivity homogeneity on the detector performance is studied through electrical measurement of the charge carrier transport and charge collection of the sample. Obtained results are explained using the Fermi level shift theory and confronted with a theoretical model and calculations. The...
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Influence of Deep Levels on Charge Transport in CdTe and CdZnTe
Dědič, Václav ; Franc, Jan (advisor) ; Oswald, Jiří (referee) ; Štekl, Ivan (referee)
CdTe and CdZnTe are promising materials for room temperature semiconductor X-ray and gamma ray detectors. The accumulation of a space charge at deep energy levels due to a band bending at contacts with Schottky barriers and due to trapped photogenerated charge may result in time dependent change of charge collection efficiency in CdTe and CdZnTe detectors known as polarization effect. This thesis is mainly focused on a study of electric field profiles in detectors under dark and high photon flux conditions simulating detector operation using crossed polarizers technique exploiting the electro-optic (Pockels) effect. It also deals with a study of deep levels responsible for the polarization and influence of contact metals on charge accumulation. Several experimental results are supported by theoretical simulations. The measurements were performed on three sets of samples equipped with different contact metals (Au, In) cut from three different n-type CdTe and CdZnTe materials. Energy levels were detected using methods based on the Pockels effect and discharge current measurements. Detailed study of internal electric field profiles has revealed a fundamental influence of near midgap energy levels related to crystal defects and contact metals on the polarization in semiconductor detectors under high radiation...
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Influence of external fields on electric field and photocurrent in CdTe detectors
Rejhon, Martin ; Franc, Jan (advisor) ; Oswald, Jiří (referee)
This thesis is focused on a study of CdTe and CdZnTe semiconductor detectors working under high flux of radiation. We studied experimentally an influence of high flux of X-rays and optical radiation on polarization of the detector. The polarization phenomenon decreases the efficiency of the detector due to a screening of an applied electric field by a space charge accumulated at deep levels due to a trapping of photogenerated carriers. In order to measure the electric field profiles in the detectors we employed a method based on cross polarizers technique and Pockels effect. The main objective of this work was to study the possibilities of an optical de-polarization of CdTe and CdZnTe detectors for different photon energies of additional light, its dynamics and physical origin. We have found that detectors can be de-polarized by above bandgap light. Moreover, CdZnTe detector can be depolarized by near infrared light and in a pulse mode. The de- polarization is associated with a compensation of the space charge at deep traps.
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Photoluminescence of CdTe crystals
Procházka, Jan ; Hlídek, Pavel (advisor) ; Toušek, Jiří (referee) ; Oswald, Jiří (referee)
Title: Photoluminescence of CdTe crystals Author: Jan Procházka Department: Institute of Physics of Charles University in Prague Supervisor: Doc. RNDr. Pavel Hlídek, CSc. Abstract: Energy levels connected with defects in nominally undoped crystals CdTe, indium- doped crystals and chlorine-doped crystals were studied using low-temperature photoluminescence. The crystals are intended for X- and gamma- ray detectors operated at room temperature. An effect of annealing in cadmium or tellurium vapor on luminescence spectra was investigated. Some changes were interpreted by filling of vacancies not only by atoms coming from gaseous phase but also by impurities from defects like interstitials, precipitates, inclusions, grain boundaries etc. The luminescence bands assigned to defects important for compensation mechanism were examined, namely A-centers (complexes of vacancy in cadmium sublattice and impurity shallow donor) and complexes of two donors bound to a vacancy. It was shown, that temperature dependence of the luminescence bands results from more complicated processes than a simple thermal escape of bound excitons or thermal excitation of electrons (holes) from defects to bands. We observed expressive "selective pair luminescence" bands (SPL) on partially compensated In-doped samples during sub-gap...
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Silicon nanocrystals, photonic structures and optical gain
Ondič, Lukáš ; Herynková, Kateřina (advisor) ; Oswald, Jiří (referee) ; Lauret, Jean-Sebastien (referee)
Silicon nanocrystals (SiNCs) of sizes below approximately 5 nm are a material with an efficient room-temperature photoluminescence (PL) and optical gain. Optical gain is a pre- requisite for obtaining stimulated emission from a pumped material, and the achievement of stimulated emission (and lasing) from Si-based nanostructures is of particular interest of the field of silicon photonics. The aim of this work was (i) to investigate fundamental optical properties of SiNCs, (ii) to design and prepare a photonic crystal with enhanced light ex- traction efficiency and (iii) to explore a possibility of enhancing optical gain of light-emitting SiNCs by combining them with a two-dimensional photonic crystal. First, free-standing oxide (SiOx/SiO2)-passivated SiNCs were prepared by electrochemical etching of a Si wafer. Their optical properties were studied by employing time-resolved spectroscopy, also at cryogenic temperatures. The fast blue-green emission band of these SiNCs was linked with the quasi- direct recombination of hot electrons and holes in the vicinity of the Γ-point. Furthermore, the spectral shift of the slow orange-red band (of these SiNCs) as a function of temperature was explained on the basis of an interplay between tensile strain and bulk Si temperature-induced indirect bandgap shift. The...
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Photoelectric transport in high resistivity CdTe
Kubát, Jan ; Franc, Jan (advisor) ; Šikula, Josef (referee) ; Oswald, Jiří (referee)
Title: Photoelectric transport in high resistivity CdTe Author: Ing. RNDr. Jan Kubát Institute: Institute of Physics of Charles University Supervisor: Doc. Ing. Jan Franc, DrSc. Supervisor's e-mail address: jan.franc@mff.cuni.cz Abstract: CdTe is one of the most promising material for fabrication of X-ray and gamma ray detectors. Despite a considerable effort invested in material development there are still problems remain to be solved and influence efficiency of charge collection. We focus on study of polarization of the sample due to space charge accumulated on deep levels in this work. Samples of CdTe doped with Cl, Sn, In and Ge were investigated. Measurements of spectral dependence of photocurrent and lux- ampere characteristics were done. We performed mathematical modeling of measured data using an approach based on a three level compensation model, and solution of drift-diffusion and Poisson equations. Concentration of deep levels 1011 -1013 cm-3 was revealed in semiinsulating CdTe by modeling. Contact method measurement for determination of µτ product using I-A characteristics and Hecht relation was applied. Mapping of CdTe and CdZnTe samples via contact and contactless method was performed and measurements were compared. Correlation analysis of maps of electric resistivity and photoconductivity has...
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Study of semiconductors by methods of laser spectroscopy
Dzurňák, Branislav ; Trojánek, František (advisor) ; Oswald, Jiří (referee) ; Herynková, Kateřina (referee)
Title: Study of semiconductors by methods of time resolved laser spectroscopy: Luminescence spectroscopy of nanocrystalline diamond Author: Branislav Dzurňák Department: Department of Chemical Physics and Optics Supervisor: doc. RNDr. František Trojánek, Ph.D. Abstract: The PhD thesis is focused on optical properties of nanocrystalline diamond prepared by chemical vapour deposition method. Photoluminescence of nanocrystalline diamond samples and effects of ambient temperature, pressure, pH and UV irradiation on it are studied by laser spectroscopy. Results suggest the keyrole of water and air adsorbates which affect the energy states in the sub-bandgap region of diamond. Photoluminescence decay of samples of different surface termination and structure and its dependency on ambient pressure and temperature is studied by methods of ultrafast (picosecond and nanosecond scale) laser spectroscopy. Results are analysed by power-law decay function which fits well the luminescence decay curves and also describes the dynamics of charge carriers in states localised within the bandgap. The model of interaction of nanocrystalline diamond with air adsorbates is proposed. Non-linear optical properties of nanocrystalline diamond are also studied, namely the generation of second and third harmonic frequency. The thesis...
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Interaction of ultrashort laser pulses with semiconductor nanostructures
Preclíková, Jana ; Malý, Petr (advisor) ; Potůček, Zdeněk (referee) ; Oswald, Jiří (referee)
The thesis is devoted to the optical spectroscopy (photoluminescence, transmission, ultrafast photoluminescence) of nanocrystalline diamond films and silver nanoparticles in titanium dioxide matrix. We studied the influence of the laser irradiation on optical properties of both materials under various conditions. Nanocrystalline diamond exhibits strong subpicosecond and picosecond photoluminescence parameters of which (intensity and decay rate) change with the laser irradiation and ambient air pressure. The effects are accompanied by a change in optical thicknesses of the nanocrystalline diamond films. We assigned the phenomena to light induced adsorption processes which influence the subgap states originating from surface and grainboundaries atoms. We implemented and optimized the preparation technique of the nanocomposite Ag-TiO2films exhibiting the multicolour photochromic effect. The analysis of the initial stages of the photochromic transformation revealed that during the laser irradiation the plasmon frequency of the resonating silver nanoparticles was blue shifted. The photoluminescence spectroscopy confirmed an increase in number of the Ag+ ions during the photochromic transformation. The photoluminescnece of the nanocrystalline TiO2 is due to the two types of radiative transitions: the...
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