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In situ monitorování růstu MOVPE InAs/GaAs struktur s kvantovými tečkami pomocí reflektanční anisotropické
Vyskočil, Jan ; Hospodková, Alice ; Pangrác, Jiří ; Melichar, Karel ; Oswald, Jiří ; Kuldová, Karla ; Mates, Tomáš ; Šimeček, Tomislav ; Hulicius, Eduard
Reflectance anisotropy spectroscopy (RAS) has been used for the real-time observation and optimization of single and double InAs/GaAs quantum dot layer structure growth. The properties of samples were ex situ characterized by photoluminescence and AFM.

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