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Lasery s napjatými tenkými InAs vrstvami v GaAs - elektroluminiscence a fotoabsorpce při zvýšených teplotách
Mačkal, Adam ; Hazdra, P. ; Hulicius, Eduard ; Pangrác, Jiří ; Melichar, Karel
Electro-optical characterisation of semiconductor lasers with very thin strained InAs layers in GaAs. The lasers exhibit high optical recombination efficiency, low threshold current and capability to operate at elevated temperatures

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