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Study of the Ta2O5 insulating layer degradation
Velísek, Martin ; Majzner, Jiří (referee) ; Sedláková, Vlasta (advisor)
The aim of the thesis is to examine the dielectric function Ta2O5 insulating layers in tantalum capacitors. The capacitor plugged in the regular mode represents a MIS structure of reverse direction. Three different factors can be determined for the residual current of the component according to its charge transmission mode: the ohmic, Pool–Frenkel, tunnel and Schottky. An apparatus was constructed by the author of the thesis to measure the temporary connection between residual current and rise of temperature of the tantalum capacitors. Annealing of three different sets of tantalum capacitors made by different producers was performed at the temperature of 400 K and nominal voltage of 35 V during the period of 20 days.The experiment has proved the residual current in the electric field changes with rising temperature in time as a result of the ion movement. The singular factors of the residual current are influenced during the process. By the “ion movement” is meant the ion drift influenced by the attached electric field and diffusion caused by the concentration gradient. First, the samples were being annealed for c. 2 x 106 s, and then the residual current was being regenerated under the voltage of 5 V for 106 s. The residual current values increased considerably after annealing, and decreased again to more or less the original level after the regeneration, some of the samples reaching even values bellow the original level. The VA characteristics of the samples measured before and after the process of controlled obsolescence, and after the regeneration prove not only a change in parameters of the different current factors, but also a change of the current transmission mechanism employed in the process.
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Study of CdTe sensor properties
Vašíček, Martin ; Holcman, Vladimír (referee) ; Grmela, Lubomír (advisor)
This Bachelor Thesis is focused on studies of CdTe detector characteristics. It is to describe the analysis of transport and noise characteristics of CdTe samples at different temperatures. Evaluation of our results proves that CdTe junction behaves like an antiseries connection of a pair of diodes. The courses of VA characteristics are noted for linear or slightly exponential growth. When temperature is growing , conductivity of the samples is growing too. Our measurements demonstrated difference in conductivity of samples tested at the same temperature. It is also obvious that within very low range of frequencies the factor of noise 1/f is dominating. From 10Hz frequency the effect of thermal noise prevails.
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The Noise Spectroscopy of Radiation Detectors Based on the CdTe
Zajaček, Jiří ; Štourač, Ladislav (referee) ; Hájek, Karel (referee) ; Grmela, Lubomír (advisor)
The main object of this work is noise spectroscopy of CdTe radiation detectors (-rays and X–rays) and CdTe samples. The study of stochastic phenomenon and tracing redundant low-frequency noise in semiconductor materials require long-term measurements in time domain and evaluate suitable power spectral densities (PSD) with logarithmic divided frequency axes. We have used the means of time-frequency analysis derived from the discrete wavelet transform (DWT) and we have designed the effective algorithm for PSD estimation, which is comparable with an original analog method. CdTe single crystal with Au contacts we can imagine as a series connection of two Schottky diodes with a resistor between them. The bulk resistance at constant temperature and other constant parameters changes due to the carrier concentration changing only. The p-type CdTe sample shows metal behavior with every temperature changes. Semiconductor properties of the sample begin to dominate just after some period of time. This behavior is caused by the hole mobility changing. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. All the studied samples have very high value of low frequency noise, much higher than it should have been according to Hooge’s formula. The excess value of low frequency noise is caused by the low carrier concentration within the depleted region.
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Study of CdTe sensor properties
Vašíček, Martin ; Holcman, Vladimír (referee) ; Grmela, Lubomír (advisor)
This Bachelor Thesis is focused on studies of CdTe detector characteristics. It is to describe the analysis of transport and noise characteristics of CdTe samples at different temperatures. Evaluation of our results proves that CdTe junction behaves like an antiseries connection of a pair of diodes. The courses of VA characteristics are noted for linear or slightly exponential growth. When temperature is growing , conductivity of the samples is growing too. Our measurements demonstrated difference in conductivity of samples tested at the same temperature. It is also obvious that within very low range of frequencies the factor of noise 1/f is dominating. From 10Hz frequency the effect of thermal noise prevails.
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|
|
The Noise Spectroscopy of Radiation Detectors Based on the CdTe
Zajaček, Jiří ; Štourač, Ladislav (referee) ; Hájek, Karel (referee) ; Grmela, Lubomír (advisor)
The main object of this work is noise spectroscopy of CdTe radiation detectors (-rays and X–rays) and CdTe samples. The study of stochastic phenomenon and tracing redundant low-frequency noise in semiconductor materials require long-term measurements in time domain and evaluate suitable power spectral densities (PSD) with logarithmic divided frequency axes. We have used the means of time-frequency analysis derived from the discrete wavelet transform (DWT) and we have designed the effective algorithm for PSD estimation, which is comparable with an original analog method. CdTe single crystal with Au contacts we can imagine as a series connection of two Schottky diodes with a resistor between them. The bulk resistance at constant temperature and other constant parameters changes due to the carrier concentration changing only. The p-type CdTe sample shows metal behavior with every temperature changes. Semiconductor properties of the sample begin to dominate just after some period of time. This behavior is caused by the hole mobility changing. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. All the studied samples have very high value of low frequency noise, much higher than it should have been according to Hooge’s formula. The excess value of low frequency noise is caused by the low carrier concentration within the depleted region.
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|
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Study of the Ta2O5 insulating layer degradation
Velísek, Martin ; Majzner, Jiří (referee) ; Sedláková, Vlasta (advisor)
The aim of the thesis is to examine the dielectric function Ta2O5 insulating layers in tantalum capacitors. The capacitor plugged in the regular mode represents a MIS structure of reverse direction. Three different factors can be determined for the residual current of the component according to its charge transmission mode: the ohmic, Pool–Frenkel, tunnel and Schottky. An apparatus was constructed by the author of the thesis to measure the temporary connection between residual current and rise of temperature of the tantalum capacitors. Annealing of three different sets of tantalum capacitors made by different producers was performed at the temperature of 400 K and nominal voltage of 35 V during the period of 20 days.The experiment has proved the residual current in the electric field changes with rising temperature in time as a result of the ion movement. The singular factors of the residual current are influenced during the process. By the “ion movement” is meant the ion drift influenced by the attached electric field and diffusion caused by the concentration gradient. First, the samples were being annealed for c. 2 x 106 s, and then the residual current was being regenerated under the voltage of 5 V for 106 s. The residual current values increased considerably after annealing, and decreased again to more or less the original level after the regeneration, some of the samples reaching even values bellow the original level. The VA characteristics of the samples measured before and after the process of controlled obsolescence, and after the regeneration prove not only a change in parameters of the different current factors, but also a change of the current transmission mechanism employed in the process.
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