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Diamond growth on silicon and WC-Co by microwave plasma chemical vapor deposition
Frgala, Z. ; Kudrle, V. ; Janča, J. ; Buršíková, V. ; Vašina, P. ; Meško, M. ; Buršík, Jiří ; Kadlečíková, M. ; Klapetek, P.
We studied the growth of microcrystalline diamond films on pre-treated Si and WC-Co substrates by microwave plasma chemical vapor deposition.We observed the interesting time dependence of the negative bias voltage during nucleation stage which is useful for nucleation process monitoring. The layers were analysed by Raman spectroscopy, scanning electron microscopy and atomic force microscopy.
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Assessment of T-stress values using finite element method
Seitl, Stanislav ; Hutař, Pavel ; Knésl, Zdeněk
The common used procedures for calculation values of T-stress are presented by using finite element method in this contribution. Such calculational procedures, that make possible to estimate T-stress by using comparison of analytical and numerical solution stress and strain near crack tip, are presented. The aim of contribution is provide survey these procedures and points to their advantages and disadvantage and in this way we intend to possible users the endeavourer orientation in this realm. Contribution is appended with practical examples of calculation of T-stress values.
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TWO-PARAMETER DESCRIPTION OF CRACKS IN THE VICINITY OF INHOMOGENEITY
Seitl, Stanislav ; Knésl, Zdeněk
In case of two-parameter linear fracture mechanics a study of inhomogeneity influence on behaviour of short cracks is performed. The values of stress intensity factor (KI), T-stress and strain energy density (SED) are shown as a function of material constants of both components. The calculation of numerical values of mechanical parameters is accomplished by using finite element method ANSYS.
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