Substrátem kontrolované fyzikální vlastnosti tenkých vrstev magnetických oxidů pro spintronické aplikace

Maleček, Tomáš

As conventional electronics approaches its fundamental limits, new paradigms are re- quired. Integration of new spintronic materials with current silicon technology shows great promise. This thesis demonstrates the possibility of growing textured stress-free La2/3Sr1/3MnO3 (LSMO) thin films on silicon with properties comparable to epitaxi- ally grown layers on SrTiO3 (STO). Growth of LSMO is achieved by a two-dimensional nanosheet (NS) seed layer of Ca2Nb3O10 inducing epitaxial stabilization of LSMO films. Samples of LSMO on NS/Si, prepared by pulsed laser deposition, have been shown to have lower magnetization than samples of LSMO on STO yet also possess a higher Curie temperature by more than 10 K. Spectral dependence of the full permittivity tensor was calculated from optical and magneto-optical measurements. Spectra of the off-diagonal element have been fitted with three diamagnetic transitions located around 1.9, 2.9 and 3.5 eV for samples on NS/Si as well as for samples on STO. Similarities between the samples open the possibility of integration of LSMO into silicon technology using NS. Temperature-dependent optical and magneto-optical properties of a sample of LSMO on STO have been evaluated.

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