Original title: Příprava řezů vzorků a jejich analýza metodou SIMS
Translated title: Preparation of sample cross-sections and analysis by SIMS
Authors: Karlovský, Juraj ; Pechal, Radim (referee) ; Bábor, Petr (advisor)
Document type: Master’s theses
Year: 2018
Language: cze
Publisher: Vysoké učení technické v Brně. Fakulta strojního inženýrství
Abstract: [cze] [eng]
Táto práca sa zaoberá možnosťami štúdia polovodičových súčastok pomocou metódy SIMS s dôrazom na testovanie rôznych parametrov merania a rôznych spôsobov prípravy vzoriek. V rámci tejto práce bol navrhnutý a otestovaný držiak vzorky kompatibilný s používaným zariadením ToF-SIMS$^{5}$ od spoločnosti IONTOF, ktorý je schopný nakláňať vzorky o definovaný uhol voči vodorovnej rovine. Tento držiak umožňuje opracovávanie vzoriek v hlavnej komore zariadenia ToF-SIMS$^5$ bez nutnosti presunu vzorky medzi zariadeniami a držiakmi. Tento držiak bol použitý opracovaniu hrany vzorky TIGBT tranzistora a zobrazeniu hrany krátera predchádzajúceho merania. Na TIGBT tranzistoroch boli zobrazované vnútorné štruktúry preparované rôznymi spôsobmi. Ďalej boli optimalizované parametre merania tenckých vrstiev na molybdén-kremíkovom multivrstvovom R\"{o}ntgenovom zrkadle a na indiových multivrstvách v GaN, kde bol pozorovaný vplyv teploty vzorky behom merania SIMS na výsledné hĺbkové proifly. This thesis studies possible methods of semiconductor sample measurement by SIMS, with emphasis on testing different measurement parameters and sample preparation. Part of this master thesis deals with the design of a modified sample holder compatible with the used ToF-SIMS$^{5}$ instrument, IONTOF company, which is capable of tilting the sample by defined angle. This holder enables sample preparation in the main chamber of the instrument without the need of transferring the sample between instruments, which limits the probability of sample contamination. This sample holder was tested by ion machining of TIGBT sample edge and by imaging of a crater edge, created in previous measurement. Edge termination structures prepared by different techniques were measured on the TIGBT samples. Further measurements with the goal of optimizing the depth resolution for thin layers were done on Molybdenum-Silicon-multilayer X-Ray Mirror. Part of the measurements was focused on comparing depth profiles measured at low temperatures. For these measurements the samples with Indium multilayers in GaN substrate were used.
Keywords: 3D depth profile; cross section; depth profile; doping; In-GaN quantum well; ion; multilayer; semiconductor; SIMS; TIGBT; ToF; UHV; 3D hĺbkový profil; dopovanie; hĺbkový profil; In-GaN kvantová jama; ión; multivrstva; polovodič; rez; SIMS; TIGBT; ToF; UHV

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: http://hdl.handle.net/11012/83339

Permalink: http://www.nusl.cz/ntk/nusl-612919


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Universities and colleges > Public universities > Brno University of Technology
Academic theses (ETDs) > Master’s theses