Original title: A Simple Calorimetric Measurement of SiC MOSFET Switching Loss and Comparison with Electric Measurement
Authors: Mikláš, Jan ; Procházka, Petr
Document type: Papers
Language: eng
Publisher: Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract: This paper proposes a simple and accessible method for dynamic calorimetric measurement of ultra-fast power semiconductor devices switching loss. It utilizes a temperature rise monitoring of a copper cube thermally coupled with a semiconductor chip. No special chambers or heat exchangers are used and no additional wiring compared to standard electric pulsed test. This provides an opportunity to perform a direct comparison with traditional electric power loss measurement, including all of the parasitic influences and further investigation of power loss with intentionally varying of particular elements impact, which absent in available literature. The paper establishes the test method and setup as well as a basic comparison of calorimetric and electric measurement.
Keywords: Power Semiconductor SiC MOSFET Switching Loss, Parasitic Waveform Distortion, Calorimetric Power Loss Measurement, Electrical Measurement, Double Pulse Test, Measurement Methods Comparison
Host item entry: Proceedings II of the 28st Conference STUDENT EEICT 2022: Selected papers, ISBN 978-80-214-6030-0

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: http://hdl.handle.net/11012/208636

Permalink: http://www.nusl.cz/ntk/nusl-511905


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