Original title: Graphene Field Effect Transistor Properties Modulation Via Mechanical Strain Induced By Micro-Cantilever
Authors: Brodský, Jan
Document type: Papers
Language: eng
Publisher: Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract: This work presents a new method, which enables the electrical characterization ofgraphene monolayer with induced mechanical strain. The device is a combination oftwo-dimensional field effect transistor (2DFET) and a MEMS cantilever, both of which can be usedto alter graphene properties. The first method applies external electric field to the graphenemonolayer. The second method is based on mechanical bending of the cantilever by external force,which induces mechanical strain in the characterized layer. By sweeping the gate voltage (VGS) inrange from – 50 V to + 50 V and measuring the current between drain and source (IDS) with fixeddrain-source voltage (VDS) at 1 V, Dirac point of graphene is found at ≈ 9.3 V of VGS. After bendingof the cantilever, the sweep is performed again. The induced strain shifts the position of the Diracpoint by ≈ 1.3 V to VGS = 8 V. Because the fabrication process is compatible with silicon technology,this method brings new possibilities in graphene strain engineering.
Keywords: cantilever; Dirac point; FET; graphene; mechanical strain; MEMS
Host item entry: Proceedings II of the 27st Conference STUDENT EEICT 2021: Selected papers, ISBN 978-80-214-5943-4

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: http://hdl.handle.net/11012/200814

Permalink: http://www.nusl.cz/ntk/nusl-447858


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