Original title: Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors
Authors: Herceg, Erik
Document type: Papers
Language: eng
Publisher: Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract: This article deals with the extrinsic and intrinsic parameters of the Galium-Nitride RF transistor. These parameters are essential in any design of large-signal analysis of RF amplifiers. Package parasitics are the biggest problem of integrated circuits (ICs), especially at high frequencies. Each IC package gives unwanted parasitics to the primary function of the IC. The analysis of these package parasitics can be performed by the transistor manufacturer, which provides a non-linear model of the transistor, where parasitics elements are separated from the transistor. With these separated package parasitics, the highest efficiency, power output, and accurate harmonic termination can be achieved. The main purpose of this article is to describe these problems.
Keywords: Extrinsic; GaN Transistor; Intrinsic; Load-Pull; Radio-Frequency; Source-Pull; Transistor Parasitics; Waveforms
Host item entry: Proceedings I of the 26st Conference STUDENT EEICT 2020: General papers, ISBN 978-80-214-5867-3

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: http://hdl.handle.net/11012/200586

Permalink: http://www.nusl.cz/ntk/nusl-447638


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