Original title: Electrical properties of nanoscale heterojunctions formed between GaN and ZnO nanorods
Authors: Tiagulskyi, Stanislav ; Yatskiv, Roman ; Grym, Jan ; Schenk, Antonín ; Roesel, David ; Vaniš, Jan ; Hamplová, Marie
Document type: Papers
Conference/Event: 9th International Conference on Nanomaterials - Research and Application (NANOCON), Brno (CZ), 20171018
Year: 2018
Language: eng
Abstract: Vertical periodic arrays of ZnO nanorods are prepared by hydrothermal growth on GaN templates patterned by focused ion beam. Electro-physical properties of a single vertically-oriented ZnO nanorod are investigated by measuring the current-voltage characteristics using a nanoprobe in a scanning electron microscope. This technique enables to observe the surface morphology of ZnO nanorods simultaneously with their electrical characterization in vacuum. The vacuum chamber rejects the impact of gas adsorption and light irradiation, which both affect the properties of ZnO nanorods. Moreover, mechanical damage and strain induced during the nanorod transfer are eliminated. Nonlinear current-voltage characteristics under the forward bias are explained by the tunneling-recombination process and by the space charge limited current. The high reverse bias current in the p-n heterojunction is attributed to direct tunneling via a narrow tunnel barrier
Keywords: Hydrothermal growth; In-situ current-voltage measurements; Scanning electron microscope
Project no.: GA17-00546S (CEP), GA15-17044S (CEP)
Funding provider: GA ČR, GA ČR

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0294830

Permalink: http://www.nusl.cz/ntk/nusl-393842

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Research > Institutes ASCR > Institute of Photonics and Electronics
Conference materials > Papers
 Record created 2019-03-28, last modified 2022-09-29

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