Název:
Electrical properties of nanoscale heterojunctions formed between GaN and ZnO nanorods
Autoři:
Tiagulskyi, Stanislav ; Yatskiv, Roman ; Grym, Jan ; Schenk, Antonín ; Roesel, David ; Vaniš, Jan ; Hamplová, Marie Typ dokumentu: Příspěvky z konference Konference/Akce: 9th International Conference on Nanomaterials - Research and Application (NANOCON), Brno (CZ), 20171018
Rok:
2018
Jazyk:
eng
Abstrakt: Vertical periodic arrays of ZnO nanorods are prepared by hydrothermal growth on GaN templates patterned by focused ion beam. Electro-physical properties of a single vertically-oriented ZnO nanorod are investigated by measuring the current-voltage characteristics using a nanoprobe in a scanning electron microscope. This technique enables to observe the surface morphology of ZnO nanorods simultaneously with their electrical characterization in vacuum. The vacuum chamber rejects the impact of gas adsorption and light irradiation, which both affect the properties of ZnO nanorods. Moreover, mechanical damage and strain induced during the nanorod transfer are eliminated. Nonlinear current-voltage characteristics under the forward bias are explained by the tunneling-recombination process and by the space charge limited current. The high reverse bias current in the p-n heterojunction is attributed to direct tunneling via a narrow tunnel barrier
Klíčová slova:
Hydrothermal growth; In-situ current-voltage measurements; Scanning electron microscope Číslo projektu: GA17-00546S (CEP), GA15-17044S (CEP) Poskytovatel projektu: GA ČR, GA ČR Zdrojový dokument: 9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2017), ISBN 978-80-87294-81-9
Instituce: Ústav fotoniky a elektroniky AV ČR
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Informace o dostupnosti dokumentu:
Dokument je dostupný v příslušném ústavu Akademie věd ČR. Původní záznam: http://hdl.handle.net/11104/0294830